Abstract: An infrared detector comprises an array of detector elements (2) of the type having a layer of pyroelectric material (4)sandwiched between upper and lower electrodes (6,8) and separated along each edge by separations (16). The electrical sheet resistance of the upper electrode array (6) is reduced by forming gold rims (24) on the edges of the electrodes (6) around the periphery of each separation (16).

Abstract: A thermal imaging device comprising a pyroelectric layer having on one major surface an array of interconnected electrodes forming an entrance face, and on the opposite major surface an array of discrete electrodes connected to electrical circuitry formed on a semiconductive substrate. Between the entrance faces of individual detector elements in a network of further electrodes of high thermal conductance which provides a high degree of thermal isolation for the detector elements and prevents significant thermal cross-talk between adjacent detector elements.

Abstract: A flow sensing device includes a semiconductor substrate 31 and a pivoted beam 1. Below one half of the beam is a channel 7 running throughout the substrate 31, and below the other half of the beam is a cavity 8. During operation, a differential force exists across the beam, and the amount of force required to compensate for this differential force is indicative of the rate of fluid flow.