Patents by Inventor Stephen E. Savas
Stephen E. Savas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145221Abstract: A broad-band sensor for a radio frequency plasma processing system that includes a reaction chamber housing an electrode within a vacuum processing environment. The sensor includes an inductive pickup positioned in the vacuum processing environment proximate to the electrode. The inductive pickup includes a wire formed into a loop extending in an azimuthal direction about a symmetry axis of the reaction chamber. A lead carrying an electric signal from the inductive pickup extends through a vacuum wall of the reaction chamber outside the vacuum processing environment. An attenuator circuit including an electrical resistance bridge couples the lead to a signal carrier extending outside the vacuum processing environment. The broad-band sensor has radio frequency detection capability for measuring electromagnetic surface modes within the plasma chamber and coupling the measured electromagnetic surface modes to the signal carrier.Type: ApplicationFiled: October 11, 2023Publication date: May 2, 2024Applicant: COMET TECHNOLOGIES USA, INC.Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER, IVAN SHKURENKOV
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Publication number: 20240071754Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Inventors: Stephen E. Savas, Shawming Ma
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Patent number: 11887820Abstract: A radio frequency plasma processing system including a reaction chamber, an electrode having an electrode symmetry axis, the electrode disposed in the reaction chamber, and a plurality of plates, each having an electrically conducting layer, disposed in the reaction chamber azimuthally with respect to the electrode symmetry axis around a perimeter of the electrode at a gap from the electrode surface, each of the plurality of plates connected to an electrical ground through a variable reactance circuit.Type: GrantFiled: January 8, 2021Date of Patent: January 30, 2024Assignee: COMET TECHNOLOGIES USA, INC.Inventors: Stephen E. Savas, Alexandre De Chambrier
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Patent number: 11848204Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.Type: GrantFiled: May 27, 2022Date of Patent: December 19, 2023Assignees: Beijing E-Town Semiconductor Technology Co., Ltd, Mattson Technology, Inc.Inventors: Stephen E. Savas, Shawming Ma
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Patent number: 11830708Abstract: A broad-band sensor for a radio frequency plasma processing system that includes a reaction chamber housing an electrode within a vacuum processing environment. The sensor includes an inductive pickup positioned in the vacuum processing environment proximate to the electrode. The inductive pickup includes a wire formed into a loop extending in an azimuthal direction about a symmetry axis of the reaction chamber. A lead carrying an electric signal from the inductive pickup extends through a vacuum wall of the reaction chamber outside the vacuum processing environment. An attenuator circuit including an electrical resistance bridge couples the lead to a signal carrier extending outside the vacuum processing environment. The broad-band sensor has radio frequency detection capability for measuring electromagnetic surface modes within the plasma chamber and coupling the measured electromagnetic surface modes to the signal carrier.Type: GrantFiled: January 8, 2021Date of Patent: November 28, 2023Assignee: COMET TECHNOLOGIES USA, INC.Inventors: Stephen E. Savas, Alexandre De Chambrier
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Publication number: 20230260755Abstract: A method of detecting plasma asymmetry in a radio frequency plasma processing system, the method including providing a radio frequency power to a reaction chamber having an approximate chamber symmetry axis and receiving from a plurality of broadband electromagnetic sensors a radio frequency signal. The method also including processing the radio frequency signals using Fourier analysis and determining based on the Fourier analysis of the radio frequency signals that a plasma asymmetry has occurred within the reaction chamber.Type: ApplicationFiled: April 25, 2023Publication date: August 17, 2023Applicant: COMET TECHNOLOGIES USA, INC.Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER
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Patent number: 11670488Abstract: A method of detecting plasma asymmetry in a radio frequency plasma processing system, the method including providing a radio frequency power to a reaction chamber having an approximate chamber symmetry axis and receiving from a plurality of broadband electromagnetic sensors a radio frequency signal. The method also including processing the radio frequency signals using Fourier analysis and determining based on the Fourier analysis of the radio frequency signals that a plasma asymmetry has occurred within the reaction chamber.Type: GrantFiled: January 8, 2021Date of Patent: June 6, 2023Assignee: COMET TECHNOLOGIES USA, INC.Inventors: Stephen E. Savas, Alexandre De Chambrier
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Patent number: 11605527Abstract: A method of controlling a radio frequency processing system, the method including determining an end time of a radio frequency pulse; stopping a load applied to the radio frequency processing system based on the end time of the radio frequency pulse; adjusting an additional load having a predetermined impedance applied to the radio frequency processing system in response to the determined end time; determining a start point of a second radio frequency pulse; and stopping the additional load before the second radio frequency pulse occurs.Type: GrantFiled: January 19, 2021Date of Patent: March 14, 2023Assignee: COMET TECHNOLOGIES USA, INC.Inventors: Alexandre De Chambrier, Stephen E. Savas
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Patent number: 11521832Abstract: A radio frequency plasma processing system including a reaction chamber, a pedestal disposed in the reaction chamber, and a plurality of sector plates disposed azimuthally around the pedestal in an annulus between the pedestal and the reaction chamber.Type: GrantFiled: January 8, 2021Date of Patent: December 6, 2022Assignee: COMET TECHNOLOGIES USA, INC.Inventors: Stephen E. Savas, Alexandre De Chambrier
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Publication number: 20220310359Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.Type: ApplicationFiled: May 27, 2022Publication date: September 29, 2022Inventors: Stephen E. Savas, Shawming Ma
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Patent number: 11348784Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.Type: GrantFiled: August 22, 2019Date of Patent: May 31, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Stephen E. Savas, Shawming Ma
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Publication number: 20220165614Abstract: Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed. downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.Type: ApplicationFiled: February 14, 2022Publication date: May 26, 2022Inventor: Stephen E. Savas
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Publication number: 20220084792Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Inventors: Stephen E. Savas, Shawming Ma
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Patent number: 11251075Abstract: Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.Type: GrantFiled: August 6, 2018Date of Patent: February 15, 2022Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventor: Stephen E. Savas
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Patent number: 11189464Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.Type: GrantFiled: July 17, 2019Date of Patent: November 30, 2021Assignees: Beijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.Inventors: Stephen E. Savas, Shawming Ma
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Publication number: 20210225613Abstract: A method of controlling a radio frequency processing system, the method including determining an end time of a radio frequency pulse; stopping a load applied to the radio frequency processing system based on the end time of the radio frequency pulse; adjusting an additional load having a predetermined impedance applied to the radio frequency processing system in response to the determined end time; determining a start point of a second radio frequency pulse; and stopping the additional load before the second radio frequency pulse occurs.Type: ApplicationFiled: January 19, 2021Publication date: July 22, 2021Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER
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Publication number: 20210217589Abstract: A radio frequency plasma processing system including a reaction chamber, a pedestal disposed in the reaction chamber, and a plurality of sector plates disposed azimuthally around the pedestal in an annulus between the pedestal and the reaction chamber.Type: ApplicationFiled: January 8, 2021Publication date: July 15, 2021Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER
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Publication number: 20210217593Abstract: A radio frequency plasma processing system including a reaction chamber, an electrode having an electrode symmetry axis, the electrode disposed in the reaction chamber, and a plurality of plates, each having an electrically conducting layer, disposed in the reaction chamber azimuthally with respect to the electrode symmetry axis around a perimeter of the electrode at a gap from the electrode surface, each of the plurality of plates connected to an electrical ground through a variable reactance circuit.Type: ApplicationFiled: January 8, 2021Publication date: July 15, 2021Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER
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Publication number: 20210217587Abstract: A method of detecting non-uniformity in a plasma in a radio frequency plasma processing system, the method including generating a plasma within a reaction chamber of the radio frequency plasma processing system and detecting electrical signals from the plasma in a frequency range from a frequency of radio frequency power sustaining the plasma to a multiple of about ten times a frequency with a plurality of sensors disposed azimuthally about a chamber symmetry axis of the radio frequency plasma processing system. The method also including comparing the waveforms of the electrical signals picked up from the plasma by the plurality of sensors and determining when a plasma non-uniformity occurs based on the comparing the electrical property of the plasma detected by each of the plurality of sensors.Type: ApplicationFiled: January 8, 2021Publication date: July 15, 2021Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER
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Publication number: 20210217590Abstract: A method of detecting plasma asymmetry in a radio frequency plasma processing system, the method including providing a radio frequency power to a reaction chamber having an approximate chamber symmetry axis and receiving from a plurality of broadband electromagnetic sensors a radio frequency signal. The method also including processing the radio frequency signals using Fourier analysis and determining based on the Fourier analysis of the radio frequency signals that a plasma asymmetry has occurred within the reaction chamber.Type: ApplicationFiled: January 8, 2021Publication date: July 15, 2021Inventors: STEPHEN E. SAVAS, ALEXANDRE DE CHAMBRIER