Patents by Inventor Stephen J. Banik, II
Stephen J. Banik, II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240141541Abstract: An apparatus for electroplating a metal on a semiconductor substrate with high control over plated thickness on a die-level includes an ionically resistive ionically permeable element (e.g., a plate with channels), where the element allows for flow of ionic current through the element towards the substrate during electroplating, where the element includes a plurality of regions, each region having a pattern of varied local resistance, and where the pattern of varied local resistance repeats in at least two regions. An electroplating method includes providing a semiconductor substrate to an electroplating apparatus having an ionically resistive ionically permeable element or a grid-like shield having a pattern correlating with a pattern of features on the substrate, and plating metal, while the pattern on the substrate remains spatially aligned with the pattern of the element or the grid-like shield for at least a portion of the total electroplating time.Type: ApplicationFiled: March 15, 2022Publication date: May 2, 2024Inventors: Lee Peng Chua, Gabriel Hay Graham, Bryan L. Buckalew, Stephen J. Banik, II, Santosh Kumar, James Isaac Fortner, Robert Rash, Steven T. Mayer
-
Publication number: 20240076795Abstract: An ionically resistive ionically permeable element for use in an electroplating apparatus includes ribs to tailor hydrodynamic environment proximate a substrate during electroplating. In one implementation, the ionically resistive ionically permeable element includes a channeled portion that is at least coextensive with a plating face of the substrate, and a plurality of ribs extending from the substrate-facing surface of the channeled portion towards the substrate. Ribs include a first plurality of ribs of full maximum height and a second plurality of ribs of smaller maximum height than the full maximum height. In one implementation the ribs of smaller maximum height are disposed such that the maximum height of the ribs gradually increases in a direction from one edge of the element to the center of the element.Type: ApplicationFiled: January 19, 2022Publication date: March 7, 2024Inventors: Stephen J. Banik, II, Gabriel Hay Graham, Bryan L. Buckalew, Robert Rash, Lee Peng Chua, Frederick Dean Wilmot, Chien-Chieh Lin
-
Publication number: 20230230847Abstract: During electro-oxidative metal removal on a semiconductor substrate, the substrate having a metal layer is anodically biased and the metal is electrochemically dissolved into an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) can inadvertently form on the surface of the substrate during electrochemical metal removal and cause defects during subsequent semiconductor processing. Contamination with such particles can be mitigated by preventing particle formation and/or by dissolution of particles. In one implementation, mitigation involves using an electrolyte that includes an oxidizer, such as hydrogen peroxide, during the electrochemical metal removal. An electrochemical metal removal apparatus in one embodiment has a conduit for introducing an oxidizer to the electrolyte and a sensor for monitoring the concentration of the oxidizer in the electrolyte.Type: ApplicationFiled: May 5, 2021Publication date: July 20, 2023Inventors: Kari Thorkelsson, Stephen J. Banik, II, Bryan L. Buckalew, Steven T. Mayer
-
Publication number: 20230212773Abstract: Nanotwinned copper and non-nanotwinned copper may be electroplated to form mixed crystal structures such as 2-in-1 copper via and RDL structures or 2-in-1 copper via and pillar structures. Nanotwinned copper may be electroplated on a non-nanotwinned copper layer by pretreating a surface of the non-nanotwinned copper layer with an oxidizing agent or other chemical reagent. Alternatively, nanotwinned copper may be electroplated to partially fill a recess in a dielectric layer, and non-nanotwinned copper may be electroplated over the nanotwinned copper to fill the recess. Copper overburden may be subsequently removed.Type: ApplicationFiled: May 12, 2021Publication date: July 6, 2023Inventors: Justin OBERST, Bryan L. BUCKALEW, Thomas Anand PONNUSWAMY, Steven T. MAYER, Stephen J. BANIK, II
-
Publication number: 20230175162Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.Type: ApplicationFiled: January 17, 2023Publication date: June 8, 2023Inventors: Stephen J. Banik, II, Aaron Berke, Gabriel Hay Graham, Gregory J. Kearns, Lee Peng Chua, Bryan L. Buckalew
-
Patent number: 11585007Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.Type: GrantFiled: November 15, 2019Date of Patent: February 21, 2023Assignee: Lam Research CorporationInventors: Stephen J. Banik, II, Aaron Berke, Gabriel Hay Graham, Gregory J. Kearns, Lee Peng Chua, Bryan L. Buckalew
-
Publication number: 20220018036Abstract: Direct copper-copper bonding at low temperatures is achieved by electroplating copper features on a substrate followed by electroplanarizing the copper features. The copper features are electroplated on the substrate under conditions so that nanotwinned copper structures are formed. Electroplanarizing the copper features is performed by anodically biasing the substrate and contacting the copper features with an electrolyte so that copper is electrochemically removed. Such electrochemical removal is performed in a manner so that roughness is reduced in the copper features and substantial coplanarity is achieved among the copper features. Copper features having nanotwinned copper structures, reduced roughness, and better coplanarity enable direct copper-copper bonding at low temperatures.Type: ApplicationFiled: December 7, 2019Publication date: January 20, 2022Inventors: Stephen J. Banik, II, Justin Oberst, Kari Thorkelsson, Bryan L. Buckalew, Thomas Anand Ponnuswamy
-
Publication number: 20220010446Abstract: A copper structure having a high density of nanotwins is deposited on a substrate. Electroplating conditions for depositing a nanotwinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nanotwinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nanotwinned copper structure is deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structure is deposited at a relatively low flow rate.Type: ApplicationFiled: October 28, 2019Publication date: January 13, 2022Inventors: Stephen J. Banik, II, Bryan L. Buckalew, Justin Oberst, Bhuvan Dua, Anica Nicole Neumann, Thomas Anand Ponnuswamy
-
Publication number: 20210395913Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.Type: ApplicationFiled: November 15, 2019Publication date: December 23, 2021Applicant: Lam Research CorporationInventors: Stephen J. Banik, II, Aaron Berke, Gabriel Hay Graham, Gregory J. Kearns, Lee Peng Chua, Bryan L. Buckalew
-
Patent number: 11001934Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.Type: GrantFiled: August 10, 2018Date of Patent: May 11, 2021Assignee: Lam Research CorporationInventors: Stephen J. Banik, II, Bryan L. Buckalew, Aaron Berke, James Isaac Fortner, Justin Oberst, Steven T. Mayer, Robert Rash
-
Patent number: 10781527Abstract: Various embodiments herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. The apparatus includes an ionically resistive element that separates the plating chamber into a cross flow manifold (above the ionically resistive element) and an ionically resistive element manifold (below the ionically resistive element). Electrolyte is delivered to the cross flow manifold, where it shears over the surface of the substrate, and to the ionically resistive element manifold, where it passes through through-holes in the ionically resistive element to impinge upon the substrate as it enters the cross flow manifold. In certain embodiments, the flow of electrolyte into the cross flow manifold (e.g., through a side inlet) and the flow of electrolyte into the ionically resistive element manifold are actively controlled, e.g., using a three-way valve. In these or other cases, the ionically resistive element may include electrolyte jets.Type: GrantFiled: September 18, 2017Date of Patent: September 22, 2020Assignee: Lam Research CorporationInventors: Stephen J. Banik, II, Aaron Berke, Bryan L. Buckalew, Robert Rash
-
Patent number: 10760178Abstract: Electroplating results can be improved by dynamically controlling the pressure in different parts of an electroplating apparatus. For example, a number of plating problems can be avoided by ensuring that the pressure in an anode chamber always remains slightly above the pressure in an ionically resistive element manifold, both during electroplating and during non-electroplating operations. This pressure differential prevents the membrane from stretching downward into the anode chamber.Type: GrantFiled: July 12, 2018Date of Patent: September 1, 2020Assignee: Lam Research CorporationInventors: Stephen J. Banik, II, Bryan L. Buckalew, Frederick Dean Wilmot, Robert Rash
-
Patent number: 10714436Abstract: Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.Type: GrantFiled: March 14, 2017Date of Patent: July 14, 2020Assignee: Lam Research CorporationInventors: Bryan L. Buckalew, Thomas A. Ponnuswamy, Steven T. Mayer, Stephen J. Banik, II, Justin Oberst
-
Publication number: 20200017989Abstract: Electroplating results can be improved by dynamically controlling the pressure in different parts of an electroplating apparatus. For example, a number of plating problems can be avoided by ensuring that the pressure in an anode chamber always remains slightly above the pressure in an ionically resistive element manifold, both during electroplating and during non-electroplating operations. This pressure differential prevents the membrane from stretching downward into the anode chamber.Type: ApplicationFiled: July 12, 2018Publication date: January 16, 2020Inventors: Stephen J. Banik, II, Bryan L. Buckalew, Frederick Dean Wilmot, Robert Rash
-
Publication number: 20190085479Abstract: Various embodiments herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. The apparatus includes an ionically resistive element that separates the plating chamber into a cross flow manifold (above the ionically resistive element) and an ionically resistive element manifold (below the ionically resistive element). Electrolyte is delivered to the cross flow manifold, where it shears over the surface of the substrate, and to the ionically resistive element manifold, where it passes through through-holes in the ionically resistive element to impinge upon the substrate as it enters the cross flow manifold. In certain embodiments, the flow of electrolyte into the cross flow manifold (e.g., through a side inlet) and the flow of electrolyte into the ionically resistive element manifold are actively controlled, e.g., using a three-way valve. In these or other cases, the ionically resistive element may include electrolyte jets.Type: ApplicationFiled: September 18, 2017Publication date: March 21, 2019Inventors: Stephen J. Banik, II, Aaron Berke, Bryan L. Buckalew, Robert Rash
-
Publication number: 20190055665Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.Type: ApplicationFiled: August 10, 2018Publication date: February 21, 2019Inventors: Stephen J. Banik, II, Bryan L. Buckalew, Aaron Berke, James Isaac Fortner, Justin Oberst, Steven T. Mayer, Robert Rash
-
Patent number: 10211052Abstract: Systems and methods for fabrication of a redistribution layer are described. There is no deposition of a seed layer, made from copper, on top of a substrate. The lack of the seed layer avoids a need for etching the seed layer. When the seed layer is not etched, the redistribution layer, also made from copper, is not etched.Type: GrantFiled: September 22, 2017Date of Patent: February 19, 2019Assignee: Lam Research CorporationInventors: Bryan L. Buckalew, Stephen J. Banik, II, Joseph Richardson, Thomas A. Ponnuswamy
-
Publication number: 20170243839Abstract: Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.Type: ApplicationFiled: March 14, 2017Publication date: August 24, 2017Inventors: Bryan L. Buckalew, Thomas A. Ponnuswamy, Steven T. Mayer, Stephen J. Banik, II, Justin Oberst