Abstract: In one aspect, a radiation hardened transistor includes a buried source, buried drain and a poly-silicon gate separated from the buried source and the buried drain by a buried oxide. A recessed P+ implant or a blanket P+ implant is disposed in a substrate. A portion of the recessed P+ implant or a portion of the blanket P+ implant is disposed beneath outer edges of the poly-silicon gate, in a channel separating the buried source and the buried drain.