Patents by Inventor Stephen Putnam
Stephen Putnam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11498208Abstract: A drive module for rotating a first robot arm member relative to a second robot arm member comprising a motor, a gear head driven by the motor, a pinion driven by the gear head and a slip clutch including an input section with integral gear teeth driven by the pinon, and an output section configured to be coupled to the second robot arm member. A housing is disposed at least about the pinion and slip clutch and configured to be coupled to the first robot arm member.Type: GrantFiled: December 21, 2020Date of Patent: November 15, 2022Assignee: Foster-Miller, Inc.Inventors: John R. Lawson, Robert E. Overman, Wesley Bird, Stephen Putnam, Dominick Freeman, Timothy J. Mason
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Publication number: 20220193889Abstract: A drive module for rotating a first robot arm member relative to a second robot arm member comprising a motor, a gear head driven by the motor, a pinion driven by the gear head and a slip clutch including an input section with integral gear teeth driven by the pinon, and an output section configured to be coupled to the second robot arm member. A housing is disposed at least about the pinion and slip clutch and configured to be coupled to the first robot arm member.Type: ApplicationFiled: December 21, 2020Publication date: June 23, 2022Inventors: John R. Lawson, Robert E. Overman, Wesley Bird, Stephen Putnam, Dominick Freeman, Timothy J. Mason
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Publication number: 20160296695Abstract: A device for filling a medicament delivery device (e.g., a patch pump) with medicament or fluid and inserting a cannula subcutaneously enables improved results and user safety, while simplifying the set up process for a user. The device can include a housing with a first chamber portion having a first deployment mechanism and a second chamber portion having a second deployment mechanism. The device can also include a trigger mounted to the housing to activate at least one of the first deployment mechanism and the second deployment mechanism and an interface adapted to mate releasably with the medicament delivery device. The filling of the device with medicament and the insertion of the cannula may occur sequentially or simultaneously, and both actions can be initiated by a single user step or a limited number of user steps, as compared to conventional approaches.Type: ApplicationFiled: April 8, 2016Publication date: October 13, 2016Inventors: Michael Hassman, Douglas Lawrence, David Freed, Patrick McDermott, Stephen Putnam, Mads Dall, Peter Gravesen, Christian B. Eriksen, Heiko Arndt
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Patent number: 8940588Abstract: Aspects of the disclosure provide a dual electrostatic discharge (ESD) protection device in fin field effect transistor (FinFET) process technology and methods of forming the same. In one embodiment, the dual ESD protection device includes: a bulk silicon substrate; a shallow trench isolation (STI) region formed over the bulk silicon substrate; a first ESD device positioned above the STI region; and a second ESD device positioned below the STI region, wherein the first ESD device conducts current above the STI region and the second ESD device conducts current below the STI region.Type: GrantFiled: August 4, 2014Date of Patent: January 27, 2015Assignee: International Business Machines CorporationInventors: Robert J. Gauthier, Jr., Tom C. Lee, Junjun Li, Souvick Mitra, Christopher Stephen Putnam
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Publication number: 20140342510Abstract: Aspects of the disclosure provide a dual electrostatic discharge (ESD) protection device in fin field effect transistor (FinFET) process technology and methods of forming the same. In one embodiment, the dual ESD protection device includes: a bulk silicon substrate; a shallow trench isolation (STI) region formed over the bulk silicon substrate; a first ESD device positioned above the STI region; and a second ESD device positioned below the STI region, wherein the first ESD device conducts current above the STI region and the second ESD device conducts current below the STI region.Type: ApplicationFiled: August 4, 2014Publication date: November 20, 2014Inventors: Robert J. Gauthier, JR., Tom C. Lee, Junjun Li, Souvick Mitra, Christopher Stephen Putnam
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Patent number: 8390068Abstract: A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: GrantFiled: January 30, 2012Date of Patent: March 5, 2013Assignee: International Business Machines CorporationInventors: Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam
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Publication number: 20120119257Abstract: A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: ApplicationFiled: January 30, 2012Publication date: May 17, 2012Applicant: International Business Machines CorporationInventors: Robert J. Gauthier, JR., Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam
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Patent number: 8138546Abstract: A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: GrantFiled: May 28, 2008Date of Patent: March 20, 2012Assignee: International Business Machines CorporationInventors: Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam
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Publication number: 20080224172Abstract: A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: ApplicationFiled: May 28, 2008Publication date: September 18, 2008Inventors: Robert J. Gauthier, Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam
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Patent number: 7399665Abstract: A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: GrantFiled: July 23, 2007Date of Patent: July 15, 2008Assignee: International Business Machines CorporationInventors: Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam
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Publication number: 20080145958Abstract: A monitor semiconductor chip that incorporates ESD sensitive resistors is subjected to the same steps in a semiconductor manufacturing process to which functional semiconductor chips are subjected. The ESD sensitive resistors are configured to experience non-volatile changes in resistance in response to ESD events, such that the resistors retain the changes in resistance after dissipation of the ESD events have occurred. As a result, the occurrence of an ESD event, and in some instances, the magnitude of an ESD event, can be detected by monitoring the resistance of the ESD sensitive resistors after one or more steps in a semiconductor manufacturing process.Type: ApplicationFiled: December 15, 2006Publication date: June 19, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michel J. Abou-Khalil, Robert J. Gauthier, Tom C. Lee, Junjun Li, Souvick Mitra, Christopher Stephen Putnam
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Publication number: 20080145993Abstract: A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: ApplicationFiled: February 25, 2008Publication date: June 19, 2008Inventors: Robert J. Gauthier, Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam
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Patent number: 7298008Abstract: Disclosed are a silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.Type: GrantFiled: January 20, 2006Date of Patent: November 20, 2007Assignee: International Business Machines CorporationInventors: Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Mahmoud A. Mousa, Christopher Stephen Putnam