Abstract: A sensor/support system includes a sensor assembly having a planar radiation detector lying parallel to a reference plane, a readout circuit, and an interconnect joining the radiation detector to the readout circuit. The system further includes a support structure, the support structure having a platform with a first side to which the sensor assembly is affixed and a second side oppositely disposed from the first side. A shim is affixed to the second side of the platform. The shim is made of a shim material different from the detector material and the platform material. The shim reduces the strain in the interconnect when the temperature of the sensor/support system is changed, as compared with the strain in the interconnect in the absence of the stabilization structure.

Abstract: A numerical input to a computer, such as an input of runway altitude to an aircraft control system, is controlled by a switch having five positions as follows: "off" for maintaining the current value, "slow increment" for increasing the value slowly, "fast increment" for increasing the value more quickly, "slow decrement" for slow decrease in the value, and "fast decrement" for faster decrease in the value. A processor monitors the current switch position. Depending on the period that a particular position is selected, the value fed to the control system and shown on a display can be "bumped" unit by unit (small units for a "slow" selection, and large units for a "fast" selection) or scrolled up or down at a rate which accelerates. Bumping is achieved by toggling the knob quickly from the off, or the next closest position, to the desired slow or fast position. Scrolling or "continuous slew" is selected by maintaining the switch in the desired slow or fast position.

Abstract: A method for chemically treating a single side of a workpiece, such as for etching or anodizing a semiconductor wafer, comprising, placing such a workpiece face down on a flat centrally apertured, relatively level table having a top or work surface of a size and shape commensurate with the dimensions of the workpiece and introducing the liquid for the chemical treatment between the top surface and side of the workpiece to be treated where the liquid passes over the entire surface to be treated and then returns to its source. The method also includes, for certain applications, a pre-processing of the workpiece by oxidizing the workpiece surface on the side of the workpiece opposite of the one to be treated to be treated to prevent creeping of the liquid around the edges thereof.

Abstract: An apparatus for chemically treating a single side of a workpiece, such as for etching or anodizing a semiconductor wafer, comprising, a flat centrally apertured, relatively level table having a top or work surface on which a workpiece is placed face down and of a size and shape commensurate with the dimensions of the workpiece, and means for introducing the liquid for the chemical treatment between the top surface and side of the workpiece to be treated where the liquid passes over the entire surface to be treated and then returns to its source. The apparatus also includes, for certain applications, means for a pre-processing of the workpiece by oxidizing the workpiece surface on the side of the workpiece opposite of the one to be treated to prevent creeping of the liquid around the edges thereof.

Abstract: A method of making a multilevel conductor pattern for a semiconductor device. An aluminum layer on the substrate surface provides a situs for first level conductors. Successive soft and hard anodization steps are advantageously used to provide excellent intralevel isolation and interlevel electrical connection in desired areas. First level conductor sites are masked and the two anodized films are selectively removed in the desired nonconductive areas. The remaining first level aluminum is completely anodized. An insulating layer is then deposited and vias are formed therethrough to connect a subsequently deposited second level metallization layer with the conductor sites.

Abstract: A fixture for holding a semiconductor wafer during anodization. The fixture has a major surface with a plurality of concentric ridges on the surface for supporting a semiconductor wafer, with adjacent ridges defining concentric channels therebetween. The fixture includes electrical contact means for contacting the inward surface of the wafer. At least one channel surrounds the contact and an insulating fluid is circulated in the channel to prevent the anodizing solution from electrically shorting to the contact. Means are also supplied for maintaining a vacuum in another channel to secure the wafer against the ridges of the fixture.