Abstract: A system for functionally testing opto-electronic devices, such as fiber-optic infrared receiver photodiodes, in the integral wafer or other optical port-exposed status. The testing arrangement uses a portable optical probe for communicating optical signals between the testing apparatus and the tested device in coincidence with electrical energization and functional operation of the electro-optical device by the test apparatus. The optical probe signals may be correlated in time relationship or other manner with the electrical signals applied-to the device-under-test. The invention provides simple conversion between a conventional electrical semiconductor device probe station and an electro-optical device probe station.

Abstract: A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.

Abstract: A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.