Abstract: Embodiments of the present invention provide a method and apparatus for remotely accessing a computer system or network to identify storage devices and to retrieve metadata from the storage devices that are respectively unique to files stored in the storage devices. The metadata provides information regarding each file stored on the storage devices and each metadata is associated with a respective file. A scanning tool compares the metadata retrieved from the computer system or network to a database or list of known metadata of known restricted content. Metadata retrieved from the computer system or network that matches metadata from the database or list of known restricted content is flagged and the file associated with the matching metadata is flagged and reported as potentially storing restricted content. During the scanning, restricted content itself is not scanned, not copied, not transferred and not stored.

Abstract: Embodiments of the present invention provide a method and apparatus for remotely accessing a computer system or network to identify storage devices and to retrieve metadata from the storage devices that are respectively unique to files stored in the storage devices. The metadata provides information regarding each file stored on the storage devices and each metadata is associated with a respective file. A scanning tool compares the metadata retrieved from the computer system or network to a database or list of known metadata of known restricted content. Metadata retrieved from the computer system or network that matches metadata from the database or list of known restricted content is flagged and the file associated with the matching metadata is flagged and reported as potentially storing restricted content. During the scanning, restricted content itself is not scanned, not copied, not transferred and not stored.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Apparatuses and methods for analyzing semiconductor workpieces are disclosed herein. In one embodiment, for example, an apparatus for analyzing a semiconductor workpiece includes a first metrology unit configured to measure photoluminescence from the workpiece and a second metrology unit configured to determine a topographical profile of the workpiece. The apparatus can further include a control unit operatively coupled to the first metrology unit and the second metrology unit to receive and associate data regarding the photoluminescence and the topographical profile to produce an integrated map of the workpiece. The apparatus may have several different configurations. In one embodiment, for example, the first metrology unit and the second metrology unit can be housed in a single tool. In other embodiments, the first metrology unit and the second metrology unit may be in separate tools.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present Invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: An apparatus and method for manufacturing a vehicle door barrier or shield for attachment to an inner door trim panel mountable on a vehicle door in which the barrier self-seals the opening between the vehicle door and the interior passenger compartment. The barrier is formed of a resilient gasket material that is shaped or formed with a peripheral rail or spring attachment surface that is compressed as the interior vehicle door trim panel is fastened to the interior surface of the door sheet metal to effect a watertight seal about the periphery of the door. The attachment surface carrying a seal material is disposed in an interference position with the door inner panel when the joined inner door trim panel and the barrier are mounted on the door inner panel. The interference deflects the attachment surface to create a joining force to secure the seal material to the door inner panel.