Abstract: Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.

Abstract: Certain embodiments provide systems and methods for sweepstakes awards in a gaming environment. Certain embodiments provide a method including accumulating sweepstakes entries for a player based on at least one sweepstakes entry criterion and randomly selecting a winner from the pool of sweepstakes entries. The sweepstakes entries are associated with the player and incorporated in a pool of sweepstakes entries. In certain embodiments, the at least one sweepstakes entry criterion comprises at least one of one entry per player, accumulating points based on play, accumulating points based on machine outcome, and coin in. In certain embodiments, the method further includes determining eligibility of a player for the sweepstakes. In certain embodiments, eligibility is determined based on at least one of a player group, a machine group, a machine denomination, a machine type, a machine manufacturer, a game manufacturer, a game theme and a game title, for example.

Abstract: Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.