Abstract: A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the chip is exposed to various gases and an energy source, such as a focused ion beam. To the extent the chip may have non-copper materials, such as nitride and oxide layers, on top of the copper that is to be removed, those non-copper materials will first be selectively removed. Such removal typically results in a hole (a so-called “elevator shaft”) leading to the copper that is to be removed. Next, the method teaches the introduction of a combination of nitrogen and oxygen into the chamber and the directing of the ion beam at the spot where the copper is to be removed. In this manner, the copper on the chip is cleanly and reliably removed, without causing damage to the processing chamber.

Abstract: A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 &mgr;m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 &rgr;A with an aperture size less than 50 &mgr;m, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.

Abstract: A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 &mgr;m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 &rgr;A with an aperture size less than 50 &mgr;m, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.

Abstract: A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the halogen gas; removing unreacted halogen gas from the surface; and directing a focused ion beam onto the surface to selectively remove a portion of the surface comprising the reaction products.