Abstract: A method includes receiving, by a processing device, first trace data associated with a first processing chamber, wherein the first processing chamber satisfies one or more performance metrics. The method further includes generating target trace data based on the first trace data associated with the first processing chamber. The method further includes receiving second trace data associated with a second processing chamber, wherein the second processing chamber does not satisfy the one or more performance metrics. The method further includes generating, based on the target trace data and the second trace data, a first recommended corrective action associated with the second processing chamber, wherein the first recommended corrective action includes updating one or more equipment constants of the second processing chamber. The method further includes performing the first recommended corrective action.

Abstract: A method includes providing, as input to a first trained machine learning model, trace data associated with one or more substrate processing procedures. The input further includes equipment constants associated with the one or more substrate processing procedures. The input further includes trace data of a first processing chamber. The input further includes equipment constants of the first processing chamber. The method further includes obtaining, as output from the first trained machine learning model, a recommended update to a first equipment constant of the first processing chamber. The method further includes updated the first equipment constant of the first processing chamber responsive to obtaining the output from the first trained machine learning model.

Abstract: A method includes receiving, by a processing device, data indicative of performance of a plurality of process chambers. The method further includes providing the data indicative of performance of the plurality of process chambers to a model. The method further includes receiving as output from the model a first recommended equipment constant update associated with a first process chamber of the plurality of process chambers and a second recommended equipment constant update associated with a second process chamber of the plurality of process chambers. The method further includes updating a first equipment constant of the first process chamber and a second equipment constant of the second process chamber in view of the first recommended equipment constant update and the second recommended equipment constant update.

Abstract: A method includes processing a first substrate in a process chamber of a substrate processing system according to a recipe while the first substrate is supported by a substrate support of the process chamber. The first substrate includes a first surface profile after the processing. The method further includes generating a first profile map of the first surface profile of the first substrate using a substrate measurement system of the substrate processing system. The method further includes processing data from the first profile map using a model. The model outputs a first estimated substrate placement value for a placement of the first substrate relative to one or more components of the substrate support. The method further includes determining a recommended placement for substrates on the substrate support based on the first estimated substrate placement value.

Abstract: A process kit ring adaptor includes one or more upper surfaces and one or more lower surfaces. The one or more upper surfaces are configured to support a process kit ring. The one or more lower surfaces are configured to interface with an end effector. The process kit ring adaptor supporting the process kit ring is configured to be transported on the end effector within a processing system.

Abstract: Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

Abstract: An apparatus for processing substrates that includes a process chamber with a process volume located above a substrate support assembly surrounded by an edge ring, an upper electrode located above the process volume and a conductive tuning ring surrounding the upper electrode and in electrical contact with the upper electrode. The conductive tuning ring has at least one gas port on a lower surface above the edge ring. The conductive tuning may also have at least one stepped portion on the lower surface that forms an extended bottom surface. In some embodiments, the extended bottom surface may slant radially inwardly or radially outwardly. In some embodiments, the extended bottom surface may have one or more radiused edges.

Abstract: A process kit ring adaptor includes one or more upper surfaces and one or more lower surfaces. The one or more upper surfaces are configured to support a process kit ring. The one or more lower surfaces are configured to interface with an end effector. The process kit ring adaptor supporting the process kit ring is configured to be transported on the end effector within a processing system.

Abstract: A process kit ring adaptor includes a rigid carrier. The rigid carrier includes an upper surface and a lower surface. The upper surface includes a first distal portion and a second distal portion to support a process kit ring. The lower surface includes a first region to interface with an end effector configured to support wafers and a solid planar central region to interface with a vacuum chuck.

Abstract: A process kit enclosure system includes surfaces to enclose an interior volume, a first support structure including first fins, a second support structure including second fins, and a front interface to interface the process kit enclosure system with a load port of a wafer processing system. The first and second fins are sized and spaced to hold process kit ring carriers and process kit rings in the interior volume. Each of the process kit rings is secured to one of the process kit ring carriers. The process kit enclosure system enables first automated transfer of a first process kit ring carrier securing a first process kit ring from the process kit enclosure system into the wafer processing system and second automated transfer of a second process kit ring carrier securing a second process kit ring from the wafer processing system into the process kit enclosure system.

Abstract: A process kit ring adaptor includes a rigid carrier. The rigid carrier includes an upper surface and a lower surface. The upper surface includes a first distal portion and a second distal portion to support a process kit ring. The lower surface includes a first region to interface with an end effector configured to support wafers and a solid planar central region to interface with a vacuum chuck.

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is