Abstract: A computer-implemented method, system, and a computer program product for delivering a shoulder-tap to one or more battery-constrained devices are disclosed. The computer-implemented method includes receiving a shoulder-tap request; storing the shoulder-tap request in a database; retrieving last known network session information for the one or more battery-constrained devices; calculating shoulder-tap beacon frequency for each of the one or more battery-constrained devices; creating a shoulder-tap beacon for each of the one or more battery-constrained devices; and sending the shoulder-tap beacon to the destination IP address for each of the one or more battery-constrained devices in the calculated shoulder-tap beacon frequency.

Abstract: A computer-implemented method, system, and a computer program product for delivering a shoulder-tap to one or more battery-constrained devices are disclosed. The computer-implemented method includes receiving a shoulder-tap request; storing the shoulder-tap request in a database; retrieving last known network session information for the one or more battery-constrained devices; calculating shoulder-tap beacon frequency for each of the one or more battery-constrained devices; creating a shoulder-tap beacon for each of the one or more battery-constrained devices; and sending the shoulder-tap beacon to the destination IP address for each of the one or more battery-constrained devices in the calculated shoulder-tap beacon frequency.

Abstract: A radio access network (RAN) may be providing, in a coverage area, at least two access channels that are available for use by any wireless communication devices (WCD). Thereafter, the RAN may detect that a threshold load exists in the coverage area and responsively reserve one of the access channels for use only by authorized WCDs. In turn, authorized WCDs in the coverage area may be configured to use the reserved access channel to transmit access probes to the RAN, while unauthorized WCDs in the coverage area may be configured to use only a generally-available access channel to transmit access probes to the RAN. In this way, the disclosed methods and corresponding devices may limit the occupancy on the reserved access channel and thereby increase the likelihood that authorized WCDs can successfully access the RAN over the reserved access channel when the coverage area becomes congested.

Abstract: A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block.

Abstract: A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block.

Abstract: A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.