Abstract: Nucleic acid sequencing methods and systems, the systems including nanochannel chip including: a nanochannel formed in an upper surface of the nanochannel chip and; a roof covering the nanochannel and comprising nanopores and a field enhancement structure; and a barrier disposed in the nanochannel. The method including: introducing a buffer solution including long-chain nucleic acids to the nanochannel chip; applying a voltage potential across the nanochannel chip to drive the nucleic acids through the nanochannel, towards the barrier, and to translocate the nucleic acids through nanopores adjacent to the barrier, such that bases of each of the nucleic acids pass through the field enhancement structure one base at a time and emerge onto an upper surface of the roof; detecting the Raman spectra of the bases of the nucleic acids as each base passes through the electromagnetic-field enhancement structure; and sequencing the nucleic acids based on the detected Raman spectra.

Abstract: A method and structure for a semiconductor transistor, including various embodiments. In embodiments, a transistor channel can be formed between a semiconductor source and a semiconductor drain, wherein a transistor gate oxide completely surrounds the transistor channel and a transistor gate metal that completely surrounds the transistor gate oxide. Related fabrication processes are presented for similar device embodiments based on a Group III-V semiconductor material and silicon-on-insulator materials.

Abstract: A method and structure for a semiconductor transistor, including various embodiments. In embodiments, a transistor channel can be formed between a semiconductor source and a semiconductor drain, wherein a transistor gate oxide completely surrounds the transistor channel and a transistor gate metal that completely surrounds the transistor gate oxide. Related fabrication processes are presented for similar device embodiments based on a Group III-V semiconductor material and silicon-on-insulator materials.

Abstract: A method and structure for a semiconductor transistor, including various embodiments. In embodiments, a transistor channel can be formed between a semiconductor source and a semiconductor drain, wherein a transistor gate oxide completely surrounds the transistor channel and a transistor gate metal that completely surrounds the transistor gate oxide. Related fabrication processes are presented for similar device embodiments based on a Group III-V semiconductor material and silicon-on-insulator materials.

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: Exemplary embodiments provide a scalable process for the growth of large scale and uniform III-N nanoneedle arrays with precise control of the position, cross sectional shape and/or dimensions for each nanoneedle. In an exemplary process, a plurality of nanoneedle array can be formed by growing one or more semiconductor material in a plurality of patterned rows of apertures with a predetermined geometry. The plurality of patterned rows of apertures can be formed though a thick selective nanoscale growth mask, which can later be removed to expose the plurality of nanoneedle arrays. The plurality of nanoneedle arrays can be connected top and bottom by a continuous coalesced epitaxial film, which can be used in a planar semiconductor process or be further configured as a photonic crystal to improve the output coupling of nanoscale optoelectronic devices such as LEDs and/or lasers.

Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

Abstract: A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled to the active region. The highly reflective facet, the partially reflective facet, the first DBR, and the second DBR form a laser cavity having a shape that is not rectangular. An angled facet emitter enables, for example, single vertical transverse mode operation of optically thick epitaxial gain regions.

Abstract: In accordance with the invention, there are processes for creating nanostructures using interferometric lithography, and apparatus and methods for conducting interferometric lithography. The apparatus can include a light source that provides an input beam characterized by both a transverse and a longitudinal coherence length, an optical arrangement for splitting the input beam in into a first beam and a second beam, wherein the first beam and the second beam each fold onto each other, and a target including a top surface, wherein the target is disposed such that an interferometric pattern is formed by the first beam and the second beam on the top surface. The apparatus can also include a prism disposed in an optical path of the first beam and an optical path of the second beam, and an immersion liquid disposed over the target and forming a continuous optical element between the prism and the target.

Abstract: Electromagnetic radiation detector elements and methods for detecting electromagnetic radiation, in particular, infrared radiation, are provided. The electromagnetic radiation detector element can include an electromagnetic radiation detector and a plasmonic antenna disposed over the electromagnetic radiation detector. The plasmonic antenna can include a metal film, a sub-wavelength aperture in the metal film, and a plurality of circular corrugations centered around the sub-wavelength aperture.

Abstract: Methods for forming an apparatus containing a nanofluidic device with a pattern having nanoscopic features includes producing a regular interference pattern in a substrate using two coherent light beams. In an embodiment, an apparatus includes a nanofluidic device having nanoscopic features in at least two dimensions. In an embodiment, a nanofludic device having nanoscopic features is formed using an ultraviolet source to generate a regular interference pattern.

Abstract: According to various embodiments, the present teachings relate to Generalized Transverse Bragg Waveguides (GTBW) that can include an a dielectric core having an index of refraction n1 and an optical axis. The optical waveguide can further include a media having an index of refraction n2 bounding a top surface and a bottom surface of the dielectric core, wherein n2<n1. The optical waveguide can also include a first dielectric cladding bounding a first side of the dielectric core, wherein the first dielectric cladding has a first periodic spatially varying index of refraction, and a second dielectric cladding bounding a second side of the dielectric core, wherein the second dielectric cladding has a second periodic spatially varying index of refraction. The direction of the first periodic spatially varying index of refraction and the direction of the second periodic spatially varying index of refraction can be at an angle other than normal or parallel to the optical axis.