Patents by Inventor Steven C. Nash
Steven C. Nash has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9996000Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: GrantFiled: April 8, 2016Date of Patent: June 12, 2018Assignees: International Business Machines Corporation, Toppan Printing Co., Ltd.Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
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Patent number: 9989843Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: GrantFiled: April 8, 2016Date of Patent: June 5, 2018Assignees: International Business Machines Corporation, Toppan Printing Co., Ltd.Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
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Publication number: 20160224720Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
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Publication number: 20160223902Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
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Patent number: 9372394Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: GrantFiled: January 24, 2014Date of Patent: June 21, 2016Assignees: International Business Machines Corporation, Toppan Printing CO., LTD.Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
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Publication number: 20150212405Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: ApplicationFiled: January 24, 2014Publication date: July 30, 2015Applicants: Toppan Printing Co., Ltd., International Business Machines CorporationInventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
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Patent number: 8586950Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.Type: GrantFiled: April 20, 2012Date of Patent: November 19, 2013Assignee: International Business Machines CorporationInventors: Brian N. Caldwell, Emily E. F. Gallagher, Steven C. Nash, Jed H. Rankin
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Publication number: 20120204136Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.Type: ApplicationFiled: April 20, 2012Publication date: August 9, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Brian Neal CALDWELL, Emily E. F. GALLAGHER, Steven C. NASH, Jed H. RANKIN
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Patent number: 8227774Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.Type: GrantFiled: January 7, 2010Date of Patent: July 24, 2012Assignee: International Business Machines CorporationInventors: Brian N. Caldwell, Emily E. F. Gallagher, Steven C. Nash, Jed H. Rankin
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Publication number: 20110165502Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.Type: ApplicationFiled: January 7, 2010Publication date: July 7, 2011Applicant: INTERNATIONAL BUINESS MACHINE CORPORATIONInventors: Brian Neal CALDWELL, Emily E. F. GALLAGHER, Steven C. NASH, Jed H. RANKIN
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Patent number: 5459001Abstract: An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.Type: GrantFiled: March 8, 1994Date of Patent: October 17, 1995Assignee: International Business Machines CorporationInventors: Scott A. Estes, Thomas B. Faure, Steven C. Nash
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Patent number: 5318687Abstract: An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.Type: GrantFiled: August 7, 1992Date of Patent: June 7, 1994Assignee: International Business Machines CorporationInventors: Scott A. Estes, Thomas B. Faure, Steven C. Nash