Patents by Inventor Steven C. Nash

Steven C. Nash has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9996000
    Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: June 12, 2018
    Assignees: International Business Machines Corporation, Toppan Printing Co., Ltd.
    Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
  • Patent number: 9989843
    Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: June 5, 2018
    Assignees: International Business Machines Corporation, Toppan Printing Co., Ltd.
    Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
  • Publication number: 20160224720
    Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
    Type: Application
    Filed: April 8, 2016
    Publication date: August 4, 2016
    Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
  • Publication number: 20160223902
    Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
    Type: Application
    Filed: April 8, 2016
    Publication date: August 4, 2016
    Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
  • Patent number: 9372394
    Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: June 21, 2016
    Assignees: International Business Machines Corporation, Toppan Printing CO., LTD.
    Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
  • Publication number: 20150212405
    Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
    Type: Application
    Filed: January 24, 2014
    Publication date: July 30, 2015
    Applicants: Toppan Printing Co., Ltd., International Business Machines Corporation
    Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
  • Patent number: 8586950
    Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: November 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Brian N. Caldwell, Emily E. F. Gallagher, Steven C. Nash, Jed H. Rankin
  • Publication number: 20120204136
    Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.
    Type: Application
    Filed: April 20, 2012
    Publication date: August 9, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Brian Neal CALDWELL, Emily E. F. GALLAGHER, Steven C. NASH, Jed H. RANKIN
  • Patent number: 8227774
    Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: July 24, 2012
    Assignee: International Business Machines Corporation
    Inventors: Brian N. Caldwell, Emily E. F. Gallagher, Steven C. Nash, Jed H. Rankin
  • Publication number: 20110165502
    Abstract: A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.
    Type: Application
    Filed: January 7, 2010
    Publication date: July 7, 2011
    Applicant: INTERNATIONAL BUINESS MACHINE CORPORATION
    Inventors: Brian Neal CALDWELL, Emily E. F. GALLAGHER, Steven C. NASH, Jed H. RANKIN
  • Patent number: 5459001
    Abstract: An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.
    Type: Grant
    Filed: March 8, 1994
    Date of Patent: October 17, 1995
    Assignee: International Business Machines Corporation
    Inventors: Scott A. Estes, Thomas B. Faure, Steven C. Nash
  • Patent number: 5318687
    Abstract: An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.
    Type: Grant
    Filed: August 7, 1992
    Date of Patent: June 7, 1994
    Assignee: International Business Machines Corporation
    Inventors: Scott A. Estes, Thomas B. Faure, Steven C. Nash