Abstract: A memory device has ferroelectric memory cells arranged into a three-dimensional (3D) structure. Each ferroelectric memory cell has a ferroelectric layer adapted to provide non-volatile storage of data. In some cases, each ferroelectric memory cell is arranged as a ferroelectric field effect transistor (FeFET) comprising a source region, a drain region, and a control gate region, the control gate region comprising the ferroelectric layer. In other cases, each ferroelectric memory cell is arranged as a ferroelectric tunnel junction (FTJ) comprising opposing conductive electrode layers between which the ferroelectric layer and a tunnel junction layer are contactingly disposed. The ferroelectric layer may be formed of HfO2, ZrO2, Hf1-xZxO2, etc. The tunnel barrier layer may be formed of Al2O3, MgO, SrTiO3, etc. The memory can be used as a substitute for DRAM, a main memory in a data storage device, a data cache, etc.

Abstract: Iron-platinum (FePt) based magnetic recording media structures that provide small grain size and isolated-grain configurations suitable for high-density magnetic recording. In one of the structures, the recording media structure includes a thin film containing grains of L10 FePt and boron as a segregant contained in intergranular regions located among the FePt grains. In another structure, the recording media structure includes a thin film containing grains of L10 FePt, wherein the film is formed on an underlayer containing at least one material selected to control the size of the FePt grains in the film. Proper choices of materials, relative amounts of the materials, processing parameters, and other variables permit these structures to be formed with grain sizes, magnetization orientations, and perpendicular coercivities that allow designers to create magnetic storage devices having storage densities of 1 Tbit/in2 and greater.

Abstract: Iron-platinum (FePt) based magnetic recording media structures that provide small grain size and isolated-grain configurations suitable for high-density magnetic recording. In one of the structures, the recording media structure includes a thin film containing grains of L10 FePt and boron as a segregant contained in intergranular regions located among the FePt grains. In another structure, the recording media structure includes a thin film containing grains of L10 FePt, wherein the film is formed on an underlayer containing at least one material selected to control the size of the FePt grains in the film. Proper choices of materials, relative amounts of the materials, processing parameters, and other variables permit these structures to be formed with grain sizes, magnetization orientations, and perpendicular coercivities that allow designers to create magnetic storage devices having storage densities of 1 Tbit/in2 and greater.