Abstract: A method to transfer a layer of graphene from one substrate to another substrate is provided. The method includes providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate. The copper foil is removed exposing a surface of the layer of graphene. Next, an oxide bonding enhancement dielectric layer is formed on the exposed surface of the layer of graphene. A second layered structure including a receiver substrate and a dielectric oxide layer is provided. Next, an exposed surface of the dielectric oxide layer is bonded to an exposed surface of the oxide bonding enhancement dielectric layer. The carrier substrate and the adhesive layer are removed exposing the layer of graphene.

Abstract: The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.

Abstract: A method to transfer a layer of graphene from one substrate to another substrate is provided. The method includes providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate. The copper foil is removed exposing a surface of the layer of graphene. Next, an oxide bonding enhancement dielectric layer is formed on the exposed surface of the layer of graphene. A second layered structure including a receiver substrate and a dielectric oxide layer is provided. Next, an exposed surface of the dielectric oxide layer is bonded to an exposed surface of the oxide bonding enhancement dielectric layer. The carrier substrate and the adhesive layer are removed exposing the layer of graphene.

Abstract: A method to transfer a layer of graphene from one substrate to another substrate is provided. The method includes providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate. The copper foil is removed exposing a surface of the layer of graphene. Next, an oxide bonding enhancement dielectric layer is formed on the exposed surface of the layer of graphene. A second layered structure including a receiver substrate and a dielectric oxide layer is provided. Next, an exposed surface of the dielectric oxide layer is bonded to an exposed surface of the oxide bonding enhancement dielectric layer. The carrier substrate and the adhesive layer are removed exposing the layer of graphene.

Abstract: The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.

Abstract: The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.

Abstract: A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

Abstract: A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

Abstract: An absorber device comprises a substrate; one or more thin film radiation absorbers arranged on the substrate; an integrated optical system, comprising at least one first optical element; a cover medium arranged above the substrate and the one or more radiation absorbers. The at least one first optical element and at least one corresponding one of the one or more radiation absorbers are aligned with respect to their optical axis, such that an incoming radiation is directed onto the one or more radiation absorbers by the optical system. A method of manufacturing an absorber device is also provided.

Abstract: An absorber device comprises a substrate; one or more thin film radiation absorbers arranged on the substrate; an integrated optical system, comprising at least one first optical element; a cover medium arranged above the substrate and the one or more radiation absorbers. The at least one first optical element and at least one corresponding one of the one or more radiation absorbers are aligned with respect to their optical axis, such that an incoming radiation is directed onto the one or more radiation absorbers by the optical system. A method of manufacturing an absorber device is also provided.

Abstract: A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

Abstract: A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

Abstract: Methods of wiring to a transistor and a related transistor are disclosed. In one embodiment, the method includes a method of forming wiring to a transistor, the method comprising: forming a transistor on a semiconductor-on-insulator (SOI) substrate using masks that are mirror images of an intended layout, the forming including forming a gate and a source/drain region for each and a channel, the SOI substrate including a semiconductor-on-insulator (SOI) layer, a buried insulator layer and a silicon substrate; forming a dielectric layer over the transistor; bonding the dielectric layer to another substrate; removing the silicon substrate from the SOI substrate to the buried insulator layer; forming a contact to each of the source/drain region and the gate from a channel side of the gate; and forming at least one wiring to the contacts on the channel side of the gate.

Abstract: The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.

Abstract: A dual transparent conductive material layer is provided between a p-doped semiconductor layer and a substrate layer of a photovoltaic device. The dual transparent conductive material layer includes a first transparent conductive material and a second transparent conductive material wherein the second transparent conductive material is nano-structured. The nano-structured second transparent conductive material acts as a protective layer for the underlying first transparent conductive material. The nano-structured transparent conductive material provides a benefit of a higher Eg of the underlying first transparent conductive material surface and a very high resilience to hydrogen plasma from the nano-structures during the formation of the p-doped semiconductor layer.

Abstract: A tunneling layer is provided between a transparent conductive material and a p-doped semiconductor layer of a photovoltaic device. The tunneling layer is comprised of stoichiometric oxides which are formed when an upper surface of the transparent conductive material is subjected to one of the surface modification techniques of this disclosure. The surface modification techniques oxidize the dangling metal bonds of the transparent conductive material. The tunneling layer acts as a protective layer for the transparent conductive material. Moreover, the tunneling layer improves the interface between the transparent conductive material and the p-doped semiconductor layer. The improved interface that exists between the transparent conductive material and the p-doped semiconductor layer results in enhanced properties of the resultant photovoltaic device containing the same. In some embodiments, a high quality single junction solar cell can be provided by this disclosure that has a very well defined interface.

Abstract: A method of forming patterned metallization by electrodeposition under illumination without external voltage supply on a photovoltaic structure or on n-type region of a transistor/junction.

Abstract: A method of patterning magnetic devices and sensors by double etching, which includes forming a layer of dielectric on a substrate; depositing a thin adhesion layer and a thin seed layer; applying a thin resist frame to pattern a structure; cleaning the metal surface to prepare for plating; electroplating to fill up the structure and the uncovered field area, which uses a paddle cell with a permanent magnet providing magnetic field to induce magnetic orientation; stripping the resist frame; etching the seed layer/adhesion layer exposed below the resist frame down to the dielectric surface; etching the rest of magnetic materials and the seed layer using electrolytic etching in the field; etching the adhesion layer in the field, and repeating the steps for building structures with multiple levels.

Abstract: A system for virtual control of electronic laboratory equipment includes a local computer system. One or more items of electronic laboratory equipment are connected to the local computer system. Each item of electronic laboratory equipment has a physical control panel including one or more displays or controls. A virtual control panel generation unit generates a virtual control panel accessible from a remote computer system. The virtual control panel is substantially similar to the physical control panel in appearance. A command interpretation unit monitors interaction between the remote user and the virtual control panel and generates electronic laboratory equipment commands for exploiting the functionality of the electronic laboratory equipment.

Abstract: A method of implementing sub-lithographic patterning of a semiconductor device includes forming a first set of patterned features with a single lithography step, the initial set of patterned features characterized by a linewidth and spacing therebetween; forming a first set of sidewall spacers on the first set of patterned features, and thereafter removing the first set of patterned features so as to define a second set of patterned features based on the geometry of the first set of sidewall spacers; and performing one or more additional iterations of forming subsequent sets of sidewall spacers on subsequent sets of patterned features, followed by removal of the subsequent sets of patterned features, wherein a given set of patterned features is based on the geometry of an associated set of sidewall spacers formed prior thereto, and wherein a final of the subsequent sets of patterned features is characterized by a sub-lithographic dimension.