Abstract: An approach for prioritizing work requests to resolve incidents in an information technology (IT) infrastructure is presented. Historical data of work requests to resolve incidents in the IT infrastructure is divided into first and second data sets. A first set of data fields of work requests in the first data set is used to generate incident concept(s). The incident concept(s) are combined with a second set of data fields of the work requests in the first data set to form a set of predictive variables. Utilizing the predictive variables, a statistical model is generated for predicting whether or not work requests will be resolved in accordance with a service level target. The statistical model is validated using the second data set. The statistical model is deployed to the IT infrastructure.

Abstract: An approach for prioritizing work requests to resolve incidents in an information technology (IT) infrastructure is presented. Historical data of work requests to resolve incidents in the IT infrastructure is divided into first and second data sets. A first set of data fields of work requests in the first data set is used to generate incident concept(s). The incident concept(s) are combined with a second set of data fields of the work requests in the first data set to form a set of predictive variables. Utilizing the predictive variables, a statistical model is generated for predicting whether or not work requests will be resolved in accordance with a service level target. The statistical model is validated using the second data set. The statistical model is deployed to the IT infrastructure.

Abstract: Dimensional data with attributed categorical variables is mined against a continuous target with any data mining method by ranking variables. The ranked variables are used to generate a tree. A population and a target value, obtained from a top node of the tree, are stored. The top node is removed from the tree to create a new tree with a next top node. Obtaining and storing a next population and a next target value for the next top node, and removing the top node or top field to create a new tree, are repeated. The listing of sequential top node parameters is plotted on a tree cusp curve that provides a graphical user interface enabling identification of a field which affect a greatest or a least number of records, based upon a magnitude of departure of the field from a norm.

Abstract: Dimensional data with attributed categorical variables is mined against a continuous target with any data mining method by ranking variables. The ranked variables are used to generate a tree. A population and a target value, obtained from a top node of the tree, are stored. The top node is removed from the tree to create a new tree with a next top node. Obtaining and storing a next population and a next target value for the next top node, and removing the top node or top field to create a new tree, are repeated. The listing of sequential top node parameters is plotted on a tree cusp curve that provides a graphical user interface enabling identification of a field which affect a greatest or a least number of records, based upon a magnitude of departure of the field from a norm.

Abstract: An exemplary method for performing fabrication sequence analysis, the method comprising, defining a process group, wherein a process group includes fabrication processes in a fabrication sequence, determining fabrication process paths in the process group to define independent variables, wherein a process path is a plurality of fabrication equipment used to fabricate a particular semiconductor device in the fabrication sequence, receiving a dependent variable for the fabrication sequence, performing analysis of variance to calculate a p-value for the process group, determining whether the p-value is lower than a threshold value, identifying a poor process path responsive to determining that the p-value is lower than a threshold value, and outputting the identified poor process path.

Abstract: Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.

Abstract: An apparatus for measuring ammonia gas concentration in an ongoing chemical mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components: a. A transferring means to collect a sample of the acidic CMP slurry; b. A converting means to convert the acidic CMP slurry to a basic slurry; c. A measuring means to measure the ammonia gas present in the basic slurry; d. A detection means to signal the end of an ongoing CMP cycle.

Abstract: An apparatus for measuring ammonia gas concentration in an ongoing mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components: a. A transferring means to collect a sample of the acidic CMP slurry; b. A converting means to convert the acidic CMP slurry to a basic slurry; c. A measuring means to measure the ammonia gas present in the basic slurry; d. A detection means to signal the end of an ongoing CMP cycle.

Abstract: An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.

Abstract: Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.

Abstract: An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.

Abstract: Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.

Abstract: An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor waters as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing at least two toroidal windings in the wet chemical etchant to be proximate to but not in contact with the workpiece; and monitoring an electrical characteristic between said at least two toroidal windings, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

Abstract: The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

Abstract: A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the at least two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process.