Patents by Inventor Steven Gwon Sheng Louie

Steven Gwon Sheng Louie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150235799
    Abstract: One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.
    Type: Application
    Filed: February 20, 2014
    Publication date: August 20, 2015
    Inventors: Chris Jozwiak, Cheol Hwan Park, Kenneth Gotlieb, Steven Gwon Sheng Louie, Zahid Hussain, Alessandra Lanzara
  • Patent number: 6835952
    Abstract: The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction.
    Type: Grant
    Filed: March 21, 2003
    Date of Patent: December 28, 2004
    Assignee: The Regents of the University of California
    Inventors: Vincent Henry Crespi, Marvin Lou Cohen, Steven Gwon Sheng Louie, Alexander Karlwalter Zettl
  • Publication number: 20040004212
    Abstract: The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction.
    Type: Application
    Filed: March 21, 2003
    Publication date: January 8, 2004
    Inventors: Vincent Henry Crespi, Marvin Lou Cohen, Steven Gwon Sheng Louie, Alexander Karlwalter Zettl
  • Patent number: 6538262
    Abstract: The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction.
    Type: Grant
    Filed: January 31, 1997
    Date of Patent: March 25, 2003
    Assignee: The Regents of the University of California
    Inventors: Vincent Henry Crespi, Marvin Lou Cohen, Steven Gwon Sheng Louie, Alexander Karlwalter Zettl
  • Patent number: 5993697
    Abstract: Novel metallic forms of planar carbon are described, as well as methods of designing and making them. Nonhexagonal arrangements of carbon are introduced into a graphite carbon network essentially without destroying the planar structure. Specifically a form of carbon comprising primarily pentagons and heptagons, and having a large density of states at the Fermi level is described. Other arrangements of pentagons and heptagons that include some hexagons, and structures incorporating squares and octagons are additionally disclosed. Reducing the bond angle symmetry associated with a hexagonal arrangement of carbons increases the likelihood that the carbon material will have a metallic electron structure.
    Type: Grant
    Filed: May 14, 1996
    Date of Patent: November 30, 1999
    Assignee: The Regents of the University of California
    Inventors: Marvin Lou Cohen, Vincent Henry Crespi, Steven Gwon Sheng Louie, Alexander Karlwalter Zettl