Abstract: An apparatus for electroplating a metal on a semiconductor substrate with high control over plated thickness on a die-level includes an ionically resistive ionically permeable element (e.g., a plate with channels), where the element allows for flow of ionic current through the element towards the substrate during electroplating, where the element includes a plurality of regions, each region having a pattern of varied local resistance, and where the pattern of varied local resistance repeats in at least two regions. An electroplating method includes providing a semiconductor substrate to an electroplating apparatus having an ionically resistive ionically permeable element or a grid-like shield having a pattern correlating with a pattern of features on the substrate, and plating metal, while the pattern on the substrate remains spatially aligned with the pattern of the element or the grid-like shield for at least a portion of the total electroplating time.

Abstract: A dust control apparatus and method for a bulk material handling transfer system having a chute comprising a pathway there through for handling varying volumes of bulk material flowing through the chute using gravity flow. A self-adjusting air restrictor gate is mounted in the chute for engaging the upper surface of flowing bulk material through the chute for restricting the air pathway during material volume flow variations to reduce dust emissions. The gate member contacts the upper surface of flowing bulk material and moves up and down in response to the flow of bulk material through the chute to restrict the flow of air to reduce dust. A counterweight mechanism and a damper helps maintain controlled contact of the air restrictor gate with the upper surface of bulk material flowing through the chute.

Abstract: A dust control apparatus and method for a bulk material handling transfer system having a chute comprising a pathway there through for handling varying volumes of bulk material flowing through the chute using gravity flow. A self-adjusting air restrictor gate is mounted in the chute for engaging the upper surface of flowing bulk material through the chute for restricting the air pathway during material volume flow variations to reduce dust emissions. The gate member contacts the upper surface of flowing bulk material and moves up and down in response to the flow of bulk material through the chute to restrict the flow of air to reduce dust. A counterweight mechanism and a damper helps maintain controlled contact of the air restrictor gate with the upper surface of bulk material flowing through the chute.

Abstract: This invention relates to shaped apertures in an ion implanter that may act to clip an ion beam and so adversely affect uniformity of an implant. In particular, the present invention finds application in ion implanters that employ scanning of a substrate to be implanted relative to the ion beam such that the ion beam traces a raster pattern over the substrate. An ion implanter is provided comprising: a substrate scanner arranged to scan a substrate repeatedly through an ion beam in a scanning direction substantially transverse to the ion beam path, thereby forming a series of scan lines across the substrate; and an aperture plate having provided therein an aperture positioned on the ion beam path upstream of the substrate scanner, and wherein the aperture is defined in part by an inwardly-facing projection.