Patents by Inventor Steven James Franson
Steven James Franson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6855992Abstract: A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.Type: GrantFiled: July 24, 2001Date of Patent: February 15, 2005Assignee: Motorola Inc.Inventors: Rudy M. Emrick, Bruce Allen Bosco, John E. Holmes, Steven James Franson, Stephen Kent Rockwell
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Patent number: 6531740Abstract: An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.Type: GrantFiled: July 17, 2001Date of Patent: March 11, 2003Assignee: Motorola, Inc.Inventors: Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson
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Publication number: 20030020070Abstract: A semiconductor structure for isolating high frequency circuitry includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, a plurality of high frequency circuits formed in and over the monocrystalline compound semiconductor material, and at least one embedded isolation wall lying within the compound semiconductor material to isolate the high frequency circuits.Type: ApplicationFiled: July 25, 2001Publication date: January 30, 2003Applicant: MOTOROLA, INC.Inventors: Stephen Kent Rockwell, Steven James Franson, John E. Holmes
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Publication number: 20030022430Abstract: A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.Type: ApplicationFiled: July 24, 2001Publication date: January 30, 2003Applicant: MOTOROLA, INC.Inventors: Rudy M. Emrick, Bruce Allen Bosco, John E. Holmes, Steven James Franson, Stephen Kent Rockwell
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Publication number: 20030020137Abstract: Various semiconductor device structures that include an inductor or balun can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.Type: ApplicationFiled: July 25, 2001Publication date: January 30, 2003Applicant: MOTORLA, INC.Inventors: Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson, Nestor Javier Escalera
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Publication number: 20030020107Abstract: Various semiconductor device structures that include one or more capacitors can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.Type: ApplicationFiled: July 25, 2001Publication date: January 30, 2003Applicant: MOTOROLA, INC.Inventors: Bruce Allen Bosco, Nestor Javier Escalera, Rudy M. Emrick, John E. Holmes, Steven James Franson
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Publication number: 20030020121Abstract: A semiconductor structure for a high frequency monolithic switch matrix includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a high frequency semiconductor integrated formed in and over the monocrystalline compound semiconductor material having one or more input ports and one or more output ports. The high frequency semiconductor integrated circuit also includes a high frequency switch circuit that is electrically coupled to a switch driver control circuit that is fabricated on the monocrystalline compound semiconductor material and which provides the DC signals required to control the high frequency circuit.Type: ApplicationFiled: July 25, 2001Publication date: January 30, 2003Applicant: MOTOROLA, INC.Inventors: Stephen Kent Rockwell, John E. Holmes, Nestor Javier Escalera, Steven James Franson
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Publication number: 20030020069Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: July 25, 2001Publication date: January 30, 2003Applicant: MOTOROLA, INC.Inventors: John E. Holmes, Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson, Nestor Javier Escalera, Stephen Kent Rockwell
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Publication number: 20030015756Abstract: A semiconductor structure for integrated control of an active subcircuit includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, the active subcircuit in the monocrystalline compound semiconductor material, and a bias subcircuit in the monocrystalline silicon substrate and electrically coupled to the active subcircuit to bias the active subcircuit.Type: ApplicationFiled: July 23, 2001Publication date: January 23, 2003Applicant: MOTOROLA, INC.Inventors: Bryan Keith Farber, Steven James Franson, John E. Holmes, Rudy M. Emrick
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Publication number: 20030015707Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.Type: ApplicationFiled: July 17, 2001Publication date: January 23, 2003Applicant: MOTOROLA, INC.Inventors: Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson, Nestor Javier Escalera, Bryan K. Farber
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Publication number: 20030015730Abstract: An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.Type: ApplicationFiled: July 17, 2001Publication date: January 23, 2003Applicant: Motorola, Inc.Inventors: Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson
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Publication number: 20030015768Abstract: Microelectromechanical (MEMS) devices are integrated with high frequency devices on a monolithic substrate or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices, such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.Type: ApplicationFiled: July 23, 2001Publication date: January 23, 2003Applicant: MOTOROLA, INC.Inventors: Bruce Allen Bosco, Steven James Franson, John E. Holmes, Nestor J. Escalera, Rudy M. Emrick, Stephen K. Rockwell
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Publication number: 20030013319Abstract: A semiconductor structure with selective doping includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, at least one monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a transistor in the at least one monocrystalline compound semiconductor material and including active regions having different conductivity levels under substantially identical bias conditions.Type: ApplicationFiled: July 10, 2001Publication date: January 16, 2003Applicant: MOTOROLA, INC.Inventors: John E. Holmes, Kurt W. Eisenbeiser, Rudy M. Emrick, Steven James Franson, Stephen Kent Rockwell
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Publication number: 20030013241Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.Type: ApplicationFiled: July 16, 2001Publication date: January 16, 2003Applicant: MOTOROLA, INC.Inventors: Stephen Kent Rockwell, Steven James Franson, Bruce Allen Bosco
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Publication number: 20030006470Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A thermo-electric device is integrated into the semiconductor structure.Type: ApplicationFiled: July 5, 2001Publication date: January 9, 2003Applicant: MOTOROLA, INC.Inventors: Steven James Franson, Daniel S. Marshall, Paige M. Holm, John E. Holmes, Bruce Allen Bosco, Rudy M. Emrick