Abstract: A semiconductor device and a method of making a semiconductor device are described. The device includes an emitter. The device also includes a collector. The device further includes a base stack. The base is located between the emitter and the collector. The base stack includes an intrinsic base region. The device further includes a base electrode. The base electrode comprises a silicide. The silicide of the base electrode may be in direct contact with the base stack. The device may be a heterojunction bipolar transistor.

Abstract: A semiconductor device and a method of making a semiconductor device are described. The device includes an emitter. The device also includes a collector. The device further includes a base stack. The base is located between the emitter and the collector. The base stack includes an intrinsic base region. The device further includes a base electrode. The base electrode comprises a silicide. The silicide of the base electrode may be in direct contact with the base stack. The device may be a heterojunction bipolar transistor.

Abstract: A semiconductor device and a method of making a semiconductor device. The device includes an emitter. The device also includes a collector. The device further includes a base stack. The base is located between the emitter and the collector. The base stack includes an intrinsic base region. The device further includes a base electrode. The base electrode comprises a silicide. The silicide of the base electrode may be in direct contact with the base stack. The device may be a heterojunction bipolar transistor.

Abstract: A semiconductor device and a method of making a semiconductor device. The device includes an emitter. The device also includes a collector. The device further includes a base stack. The base is located between the emitter and the collector. The base stack includes an intrinsic base region. The device further includes a base electrode. The base electrode comprises a silicide. The silicide of the base electrode may be in direct contact with the base stack. The device may be a heterojunction bipolar transistor.

Abstract: A brush including layers of bristles used with a handle. Plates, with bristles connected to a base at one end, are retained by the handle. Certain stackable plates may also be interconnected by a set of hinges. Plates can be of a unitary plastic construction and can be stacked or folded upon one another to form layers of plates with bristles. A corrugated layer is adjacent to a first plate or between two plates. The corrugated layer has a base and corrugated bristles extending from an end of the base, with the corrugated bristles preferably shaped in alternating ridges and grooves. The corrugated layer is stiffer than an adjacent plate of bristles and assists with liquid retention of the brush. Recesses or holes in the ridges of the corrugated bristles can aid with liquid retention in the brush before applying the liquid on a surface.

Abstract: A brush including removable plates with tines that can be inserted into a complementary handle. The plates, made up of tines connected to a manifold at one end, are retained by the handle. Removable flat plates can be of a unitary construction and can be rolled, stacked or folded upon one another to form layers of tines. The plates are designed to be easily separated from a brush after use to allow for cleaning or replacement. The plates may also be interconnected by a set of hinges. The tines may include a plurality of flutes or ribs that increase the surface area of the tines and aid in increasing liquid retention when the brush is being used. After use, the individual plates can be removed from the handle and easily cleaned.

Abstract: A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.

Abstract: A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.

Abstract: A container for liquids having a receptacle suitable for containing a liquid, the receptacle having a wall portion and a floor portion joined to contain liquid, the wall portion having an aperture suitable for allowing a substantial portion of the liquid to be viewed therethrough; and a window means for allowing a user to view the liquid contained in the receptacle, the window means being located contiguous with the aperture so as to prevent liquid from escaping from the receptacle through the aperture.

Abstract: When an external reset signal EXRST is asserted received by a reset unit (6), it is synchronised with an internal clock to produce an internal reset signal INRST, which is applied to a CPU (4) and other modules in the circuit to reset them. While the internal reset signal INRST is being applied to the CPU, the rate of a refresh signal being generated by a DRAM controller (7) for refreshing data in DRAM (3) is increased. Then, when the external reset signal EXRST is disabled, a delayed reset signal DLYRST is generated and applied to the DRAM controller (7) so that it is reset. The CPU, being already reset, can then quickly reconfigure the DRAM controller and re-enable it to resume refreshing the DRAM (4), thus maintaining the data in the DRAM.

Abstract: A low pressure warning cap for a pneumatic tire air valve including a generally cylindrical body having first and second ends, a cylinder adjacent the first end, a threaded connector for attachment to a conventional air valve stem of a pneumatic tire at the second end and an acting chamber connecting with and disposed intermediate the cylinder and the threaded connector, a piston disposed in the cylinder and resiliently biased toward the acting chamber, the cylinder having an opening at the first end, a deformable diaphragm disposed across the acting chamber between the threaded connector and the enlarged end, a perforated diaphragm disposed across the cylinder adjacent the opening, an elastic sack enveloping in air tight manner the first end including the opening, and a protuberance in the threaded connector to cooperate with the valve to open the valve upon attachment of the cap to valve, whereby, at a desired tire pressure, the deformable diaphragm is deformed by air from at the desired pressure to move th