Abstract: Digital and analog functionality are separated and optimized in an Ethernet port architecture to free port circuit space for additional desired functionality. A power controller and physical link controller for the port share a high speed communication link to transfer information and control instructions from one to the other. The physical link controller provides digital functionality and processing capabilities that can generate power control instructions sent to the power controller over the high speed link. The power controller provides analog functionality for controlling the power supplied to the network connection and transfers power related information to the physical link controller over the high speed communication link and receives control instructions through a digital interface. The separation of digital of analog functionality simplifies the power control circuitry, removes redundancy, and frees valuable circuit board space for other desired functionality.

Abstract: A method for fabricating a buried zener diode concurrently with other semiconductor devices on a large scale semiconductor wafer includes utilizing a composite mask to define one or more stable buried zener diodes, one or more additional semiconductor devices, and a number of isolation regions. After applying a screen oxide over selected portions of the semiconductor wafer, subsequent ion implantation steps and additional masking steps concurrently form the stable buried zener diode along with additional and different semiconductor devices utilizing conventional ion implant bi-polar processing techniques.

Abstract: A new process making it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep ion implantation of p type dopant (boron). A second ion implantation of n type dopant (arsenic) is made over the p type implantation. Both implantations are driven in to the required degree. An additional p type dopant diffusion is made coincident with the base formation by ion implantation to establish connection to the original deep p-doped region, and an additional n type dopant diffusion is made coincident with the emitter formation to establish connection with the n type dopant implantation.

Abstract: A new process making it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep ion implantation of p type dopant (boron). A second ion implantation of n type dopant (arsenic) is made over the p type implantation. Both implantations are driven in to the required degree. An additional p type dopant diffusion is made coincident with the base formation by ion implantation to establish connection to the original deep p-doped region, and an additional n type dopant diffusion is made coincident with the emitter formation to establish connection with the n type dopant implantation.