Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 ?m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

Abstract: A reduction in leakage current and an increase in efficiency of III-nitride LEDs is obtained by sidewall passivation using atomic layer deposition of a dielectric. Atomic layer deposition is a hydrogen-free deposition method, which avoids problems associated with the effects of hydrogen on passivation and transparency.

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 ?m. A flip chip display device is also disclosed.

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 ?, or at least 20 ?, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A white light emitting device includes an edge-emitting laser diode, such as a III-nitride laser diode, emitting light in a first wavelength range that is converted to light at a longer wavelength by a single crystal, ceramic or polycrystalline phosphor, such as a Ce:YAG single crystal phosphor, wherein the phosphor absorbs only some of the light emitted from the laser diode, such that a combination of remaining light emitted from the laser diode with the light at the longer wavelength emitted from the phosphor results in emission of high-intensity white light from the device. Reflectors on either side of the edge-emitting III-nitride laser diode reflect the light from both ends of the edge-emitting laser diode towards the phosphor. One or more sides of the phosphor may roughened, or a scattering layer may be added, to promote uniform color mixing of the emissions.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method for fabricating a composite useful in a white light emitting device, includes mixing a phosphor and a filler to form a mixture; sintering the mixture (e.g., using spark plasma sintering) to form a composite; and annealing the composite to reduce oxygen vacancies and improve optical properties of the composite. Also disclosed is a white light emitting device including a laser diode or light emitting diode optically pumping the phosphor in the composite to produce white light. The composite fabricated using the method (and having. e.g., at most 50% phosphor by weight) can (1) reduce an operating temperature of the phosphor by 55 degrees, (2) increase an external quantum efficiency (e.g., by at least 15%) of the white light emitting device, and (3) result in color points and quality of the white light that is equal to or improved, as compared to without the filler.

Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 ?m. A flip chip display device is also disclosed.

Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 ?m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.