Abstract: X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

Abstract: X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

Abstract: Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

Abstract: Various embodiments for using three-dimensional representations for defect-related applications are provided. One computer-implemented method for determining one or more inspection parameters for a wafer inspection recipe includes generating a three-dimensional representation of one or more layers of a wafer based on design data. The method also includes determining one or more inspection parameters for a wafer inspection recipe based on the three-dimensional representation.

Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface, as well as to detect defects only on the surface.

Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface, as well as to detect defects only on the surface.

Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface.

Abstract: Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

Abstract: Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Abstract: Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface.

Abstract: A method for wafer defect inspection may include, but is not limited to: providing an inspection target; applying at least one defect inspection enhancement to the inspection target; illuminating the inspection target including the at least one inspection enhancement to generate one or more inspection signals associated with one or more features of the inspection target; detecting the inspection signals; and generating one or more inspection parameters from the inspection signals. An inspection target may include, but is not limited to: at least one inspection layer; and at least one inspection enhancement layer.

Abstract: Various embodiments for using three-dimensional representations for defect-related applications are provided.

Abstract: A method for wafer defect inspection may include, but is not limited to: providing an inspection target; applying at least one defect inspection enhancement to the inspection target; illuminating the inspection target including the at least one inspection enhancement to generate one or more inspection signals associated with one or more features of the inspection target; detecting the inspection signals; and generating one or more inspection parameters from the inspection signals. An inspection target may include, but is not limited to: at least one inspection layer; and at least one inspection enhancement layer.