Abstract: A method and system for high-speed 2? multi-point scatterometry is disclosed. The method includes directing a laser beam from a laser light source to a collimation optical system that collimates the laser beam to a collimated laser beam; adjusting a polarization of the collimated laser beam using a polarization control optics; directing the collimated laser beam that is polarized by a first optical system to illuminate a focal area on a sample surface; receiving reflected light from the focus of the laser light source at the sample surface by a second optical system; detecting the reflected light by a detector system to produce detection signals; and processing the detection signals to measure parameters of the sample surface.

Abstract: Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (>wavelength), ˜1-nm aperture “tortuous” nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

Abstract: Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (>wavelength), ˜1-nm aperture “tortuous” nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

Abstract: A spectral sensor and a method for forming the spectral sensor is disclosed. The spectral sensor includes a planar waveguide on a substrate; a restriction mechanism that restricts a range of angles of incidence of light impinging onto the chirped input coupling grating; the chirped input grating formed to couple incident light into the planar waveguide, wherein the chirped input coupling grating comprises a first transverse chirp to provide a spectrally selective coupling of incident light Into the planar waveguide; a propagation region to filter out light that is not coupled into the planar waveguide; a detector array arranged on the opposite side of the propagation region from the chirped input coupling S grating to receive light coupled out of the planar waveguide and produce output signals representative of the light; and an electrical circuit to readout output signals from the detector array.

Abstract: An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

Abstract: Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (>wavelength), ˜1-nm aperture “tortuous” nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

Abstract: Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire.

Abstract: A system for measuring a periodic array of structures on a sample is provided. The system includes an optical source configured to produce an optical beam; an optical system configured to control the polarization of the optical beam and to focus the optical beam with a first NA1 on a sample surface and to sweep the angle of incidence across a range of angles with an approximately fixed focal position on a sample surface with a second NA2 wherein NA2>NA1; additional optical components configured to receive the optical beam reflected from the sample surface and to focus the reflected beam onto a detector; and a recording system to record the reflectivity of the sample surface as a function of the angle of incidence. In an embodiment, the optical system provides a spot on the sample such that both the angle of incidence and the position on the sample are varied during a sweep.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: An angular sensitive time-of-flight position sensor device is provided and includes an array of pixels each comprising: a planar waveguide structure; a collection area with a grating pattern at a specific periodicity to couple incident light into the planar waveguide structure; at least one detector placed outside of the collection area and in a plane different from that of the planar waveguide structure; an output coupler to direct the light from planar waveguide to the at least one detector; a mask to shield the at least one detector from direct illumination; a narrow band light source that illuminates a field-of-view; a first electronics configured to detect the time-of-flight of light retroreflected, scattered, or both incident onto the position sensor and configured to provide distance ranging information; and a second electronics configured to interpret and retain time-of-flight information and configured to communicate with external electronics for system applications.

Abstract: Provided is a spectral sensor array, including: a planar waveguide on a substrate; a chirped input coupling grating, wherein the chirped input coupling grating comprises a transverse chirp to provide a spectrally selective coupling of incident light into the planar waveguide; an output coupling grating; and an array of photodetectors arranged to receive the light coupled out of the waveguide.

Abstract: A system for measuring a periodic array of structures on a sample is provided. The system includes an optical source configured to produce an optical beam; an optical system configured to control the polarization of the optical beam and to focus the optical beam with a first NA1 on a sample surface and to sweep the angle of incidence across a range of angles with an approximately fixed focal position on a sample surface with a second NA2 wherein NA2>NA1; additional optical components configured to receive the optical beam reflected from the sample surface and to focus the reflected beam onto a detector; and a recording system to record the reflectivity of the sample surface as a function of the angle of incidence.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.