Abstract: In a method for manufacturing a solder joint part, at least one of a first metal base material and a second metal base material is an alloy containing Ni in an amount of more than 0 wt % and less than 44 wt % and Cu in an amount of more than 56 wt %, and solder is a solder alloy containing Ga and inevitable impurities or a solder alloy containing Ga as a main component and having a melting point of 30° C. or lower. The method includes applying the solder to a surface of the first metal base material and placing the second metal base material on the applied solder, and heating the first and second metal base materials to a temperature of 90° C. or lower in a specified atmosphere or in a liquid to generate CuGa2 or (Cu, Ni)Ga2 between the first and second metal base materials, thereby joining the first and second metal material.

Abstract: Systems and methods are provided for asset utilization and trigger-based automation. A network management system may receive a receive a network management configuration that identifies a configuration of a set of assets to be allocated to a service. The network management system may generate an asset utilization dataset including a set of utilization values associated with the set of assets generated over a time. The asset utilization data set may be used to train a machine-learning model configured to generated predictions corresponding to a future utilization associated with the set of assets. The network management system may then execute the machine-learning model predict utilization of a first asset. Upon determining that the predicted utilization is greater than a threshold, the network management system may execute an action associated with the set of assets.

Abstract: In a method for manufacturing a solder joint part, at least one of a first metal base material and a second metal base material is an alloy containing Ni in an amount of more than 0 wt % and less than 44 wt % and Cu in an amount of more than 56 wt %, and solder is a solder alloy containing Ga and inevitable impurities or a solder alloy containing Ga as a main component and having a melting point of 30° C. or lower. The method includes applying the solder to a surface of the first metal base material and placing the second metal base material on the applied solder, and heating the first and second metal base materials to a temperature of 90° C. or lower in a specified atmosphere or in a liquid to generate CuGa2 or (Cu, Ni)Ga2 between the first and second metal base materials, thereby joining the first and second metal material.

Abstract: A solder alloy may include a Sn—Cu hypereutectic area having Cu in the amount of up to 7.6 weight percent, from 0.006 to 0.5 weight percent of Al, Al2O3, or a combination thereof.

Abstract: A solder alloy may include a Sn—Cu hypereutectic area having Cu in the amount of up to 7.6 weight percent, from 0.006 to 0.5 weight percent of Al, Al2O3, or a combination thereof.

Abstract: A method of forming a hypoeutectic aluminium silicon alloy including the steps of: forming an aluminium melt including greater than zero and less than about 12 wt % silicon, adding 20-3000 ppm of a eutectic modifying element selected from the group consisting of strontium, sodium, antimony, barium, calcium, yttrium, lithium, potassium, ytterbium, europium and mischmetal; and either adding nucleant particles and/or causing nucleant particles to be formed in the melt, the nucleant particles being selected from the group of TiSix, MnCx, AlP, AlBx and CrBx wherein x is an integer of 1 or 2.

Abstract: A method of forming a hypoeutectic aluminium silicon alloy including the steps of: forming an aluminium melt including greater than zero and less than about 12 wt % silicon, adding 20-3000 ppm of a eutectic modifying element selected from the group consisting of strontium, sodium, antimony, barium, calcium, yttrium, lithium, potassium, ytterbium, europium and mischmetal; and either adding nucleant particles and/or causing nucleant particles to be formed in the melt, the nucleant particles being selected from the group of TiSix, MnCx, AlP, AlBx and CrBx wherein x is an integer of 1 or 2.