Abstract: A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.

Abstract: A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.

Abstract: A method of forming an integrated resonator apparatus includes depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate. First and second resonator electrodes are formed over the alternating dielectric layers, with a piezoelectric layer located between the first and second resonator electrodes. A mass bias is formed over the first and second resonator electrodes. The mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers may be encapsulated with a plastic mold fill.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

Abstract: The dominant frequency of a solidly mounted resonator (100/280/300/400) is substantially increased by reducing the thickness of each layer of each Bragg acoustic reflector (112/160/224/274) to have a thickness than is substantially equal to one-quarter of the wavelength of a frequency that is a higher harmonic resonant frequency of the fundamental resonant frequency of the solidly mounted resonator (100/280/300/400).

Abstract: A method of forming a functionalized sensor array includes providing a substrate having at least one sensor array chip including a plurality of sensor structures. The sensor structures include a piezoelectric layer interposed between upper and lower electrodes and positioned across an area of the sensor array chip in a spatial arrangement. An inkjet cartridge chip is also provided having a plurality of microfluidic channels including a fill side having a plurality of fill side orifices and a dispense side having a plurality of dispense nozzles, wherein two or more of the plurality of microchannels are loaded with different sensing materials, and wherein locations of the plurality of dispense nozzles are matched to the spatial arrangement. The plurality of dispense nozzles are aligned to the plurality of sensor structures, and the plurality of dispense nozzles are actuated to deposit the different sensing materials on the plurality of sensor structures.

Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

Abstract: An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator.

Abstract: A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.

Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

Abstract: An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator.

Abstract: An integrated resonator apparatus comprises a piezoelectric resonator, an acoustic Bragg reflector coupled to the piezoelectric resonator, and a substrate on which the acoustic Bragg reflector is disposed. The apparatus also includes an active heater layer covering the piezoelectric resonator. Heat produced by the active heater layer is controllable by an amount of current provided through the heater layer.

Abstract: A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

Abstract: A method of forming a functionalized sensor array includes providing a substrate having at least one sensor array chip including a plurality of sensor structures. The sensor structures include a piezoelectric layer interposed between upper and lower electrodes and positioned across an area of the sensor array chip in a spatial arrangement. An inkjet cartridge chip is also provided having a plurality of microfluidic channels including a fill side having a plurality of fill side orifices and a dispense side having a plurality of dispense nozzles, wherein two or more of the plurality of microchannels are loaded with different sensing materials, and wherein locations of the plurality of dispense nozzles are matched to the spatial arrangement. The plurality of dispense nozzles are aligned to the plurality of sensor structures, and the plurality of dispense nozzles are actuated to deposit the different sensing materials on the plurality of sensor structures.

Abstract: The dominant frequency of a solidly mounted resonator (100/280/300/400) is substantially increased by reducing the thickness of each layer of each Bragg acoustic reflector (112/160/224/274) to have a thickness than is substantially equal to one-quarter of the wavelength of a frequency that is a higher harmonic resonant frequency of the fundamental resonant frequency of the solidly mounted resonator (100/280/300/400).

Abstract: A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.