Abstract: In a method of forming a micron-size field emitter, an array of conductive tips is formed on a substrate. A layer of dielectric material is formed on the substrate to a thickness substantially equal to the height of the tips, but forming a protuberance over each tip. A conductive grid layer is deposited over the dielectric layer, forming corresponding protuberances, followed by a layer of resist material which is of sufficiently low viscosity so that it flows off the grid layer at the protuberances leaving the protuberances substantially unprotected. The grid and dielectric layers in the protuberances are then etched away to reveal the tips through the resulting apertures in the grid and dielectric layers. The apertures are thereby automatically aligned with the tips without the need for lithographic processes.