Abstract: A conventional vapor phase deposition reactor tube typically formed of quartz is provided with a tubular liner supporting one or two crucibles carrying in turn one or two boats for holding constituents used for the deposition process. The liner, crucibles and boats are formed preferably of pyrolytic boron nitride (PBN). Reactant or constituent gas carrying tubes are formed preferably of sapphire. A buffer zone of an inert gas upstream of the liner and between the liner and the tube serves to isolate the liner and reactor tube from contaminating gases.

Abstract: A first compound semiconductor layer is epitaxially formed on a surface of a semi-insulating substrate. The first semiconductor layer is then removed and a second compound semiconductor layer is epitaxially formed on the substrate surface which is now exposed.

Abstract: A fixture for use within an epitaxial deposition reactor includes a box adapted to receive a semiconductor substrate. The box is movable to a position of reactant gas flow within the reactor and it includes a porous cover. A stagnant mixture of reactant gases is maintained between the substrate and the cover while the box is within the zone of reactant gas flow.

Abstract: A vapor phase deposition apparatus includes a coaxially mounted reactor tube, jacketed assembly tube, bearing/plug assembly, and rod/substrate holder. Gas inlets are provided in the reactor tube, and assembly tube and a vent is provided on the jacketed portion of the assembly tube, such that a double counterflow gas pattern can be established in the apparatus. The apparatus permits controllable deposition cycle and it can be readily disassembled for periodic maintenance.