Abstract: The invention relates to a neutron detector (1) comprising a semiconductor detector substrate (10) and a conductive neutron converting layer (20), such as of TiB2. The neutron detector (1) thereby comprises a conductive contact made of a neutron conversion material (20).

Abstract: A method and device for producing an X-ray pixel detector, for X-ray photons, the detector presenting high efficiency combined with high resolution for obtaining a high image quality detector while at the same time minimizing the X-ray dose used. The application is particularly important whenever the X-ray photon absorption distance is much longer than the required pixel size. The arrangement presents a structure based on light-guiding of secondarily produced photons within a scintillating pixel detector in conjuction with, a CCD or a CMOS pixel detector. The structure presents a matrix (8) having deep pores (10) fabricated by high-aspect ratio silicon etching techniques producing very thin walls and with a pore spacing less or equal to the size of a pixel (2) of the image detector used. The pore matrix is subsequently filled by melting a scintillating material into the pores such that, in each pore, a single scintillating block is formed.

Abstract: A method for manufacturing integrated circuits in which conductors and gate structures are built-up on a substrate plate, the conductors incorporating a layer of polycrystalline silicon and the gate structures including a gate electrode of polycrystalline silicon, where each of the gate structures is surrounded by doped source-and-drain-areas and where the gate electrode and the source-and-drain-areas respectively are metallized by depositing thereon a metal which reacts with the silicon from which the gate electrode and the source-and-drain-areas are comprised, so as to form a silicide layer. In accordance with the invention the gate electrode (3) is metallized in a first process stage. The source-and-drain-areas (18, 19) are metallized in a later process stage. Subsequent to metallizing the gate electrode in the first process stage, a protective layer (5) is applied to the metallized layer (4) of the gate electrode in a second process stage.