Patents by Inventor Su Chang
Su Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240363399Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.Type: ApplicationFiled: July 12, 2024Publication date: October 31, 2024Inventors: Kuo-Ju Chen, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Meng-Han Chou
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Publication number: 20240363736Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first fin structure with a first height and a first width formed over the substrate, a second fin structure with a second height and a second width formed over the substrate, and an insulating stack formed over lower portions of the first and second fin structures. The second height can be substantially equal to the first height and the second width can be greater than the first width. A top surface of the insulating stack can be below top surfaces of the first and second fin structures.Type: ApplicationFiled: July 12, 2024Publication date: October 31, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Su-Hao Liu, Huicheng Chang, Chien-Tai Chan, Liang-Yin Chen, Yee-Chia Yeo, Szu-Ying Chen
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Patent number: 12132879Abstract: A device such as a color printer includes a main memory, a cache memory, and a convolutional neural network configured to convert pixels from a first color space to a second color space. The convolutional neural network is organized into execution-separable layers, and loaded one or more layer at a time (depending on cache size) from the main memory to the cache memory, whereby the pixels are processed through each of the layers in the cache memory, and layers that have completed processing are evicted to make room for caching next layer(s) of the network.Type: GrantFiled: September 18, 2023Date of Patent: October 29, 2024Assignee: KYOCERA Document Solutions, Inc.Inventors: Michael M. Chang, Dongpei Su, Sheng Li, Kenneth Allen Schmidt
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Patent number: 12132009Abstract: A semiconductor package includes a substrate having a first surface and a second surface opposing the first surface; a plurality of first pads disposed on the first surface of the substrate and a plurality of second pads disposed on the second surface of the substrate and electrically connected to the plurality of first pads; a semiconductor chip disposed on the first surface of the substrate and connected to the plurality of first pads; a dummy chip having a side surface facing one side surface of the semiconductor chip, disposed on the first surface of the substrate spaced apart from the semiconductor chip in a direction parallel to the first surface of the substrate, the dummy chip having an upper surface positioned lower than an upper surface of the semiconductor chip in a direction perpendicular to the first surface of the substrate; an underfill disposed between the semiconductor chip and the first surface of the substrate, and having an extension portion extended along the facing side surfaces of the sType: GrantFiled: May 5, 2023Date of Patent: October 29, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventor: Su Chang Lee
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Publication number: 20240351583Abstract: An autonomous driving control system and a method thereof are provided. The autonomous driving control system includes a strategy performing device that generates and performs a stop strategy of a vehicle on the basis of a target stop location, when a critical situation occurs during autonomous driving, a behavior controller that controls a behavior of the vehicle depending on the stop strategy, and an emergency module controller that runs a predetermined emergency module, when the critical situation occurs.Type: ApplicationFiled: June 28, 2024Publication date: October 24, 2024Inventors: Dong Hwi Lee, Keon Chang Lee, Su Jung Yoo
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Publication number: 20240344378Abstract: A bidirectionally openable console includes side lid portions, a center lid portion positioned between the side lid portions, a first button unit positioned at a front end of the center lid portion, a second button unit positioned at a rear end of the center lid portion, and rotary units configured to be respectively rotated by movement of the first and second button units. The console further includes: fastening units, each of which is constructed such that, when an opening request input is applied to a corresponding button unit, a corresponding rotary unit is rotated to retract a central shaft portion into the center lid portion; hinge units, each of which is rotated together with the center lid portion when the center lid portion is opened, and locking units, each of which restricts movement of the fastening unit when the center lid portion is closed.Type: ApplicationFiled: September 22, 2023Publication date: October 17, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DAYOU EP CO., LTD.Inventors: Jung Hoon Woo, Dae Hee Lee, Hong Sik Chang, Hye Kyung Kim, Kwan Woo Lee, Sang Jin Joung, Kyoung Sik Kim, Seol Wan Park, Nam Su Park, Hong Kil Noh
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Patent number: 12112977Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.Type: GrantFiled: March 27, 2023Date of Patent: October 8, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuo-Ju Chen, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Meng-Han Chou
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Publication number: 20240331785Abstract: A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.Type: ApplicationFiled: June 11, 2024Publication date: October 3, 2024Inventors: Kyung-Min KANG, Dongku KANG, Su Chang JEON, Won-Taeck JUNG
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Publication number: 20240332657Abstract: The present disclosure provides a method for recycling a waste lithium ion battery, a method for smart recycling a waste lithium ion battery, and a system for smart recycling a waste lithium ion battery, comprising a partial melt separation process for lithium alloy compound formation and graphite separation, wherein the partial melt separation process comprises dry-separating a lithium alloy compound, a copper metal, an aluminum-copper alloy, and graphite from waste lithium ion battery cell shreds, discharged waste lithium ion battery cells or waste lithium ion battery cases.Type: ApplicationFiled: January 29, 2024Publication date: October 3, 2024Inventors: Byung-Su KIM, Jeonghyun YOO, Ji-Hyuk CHOI, Taegong RYU, Han Kwon CHANG
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Publication number: 20240321751Abstract: A semiconductor device includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants. The dopants are bonded to the noble metal material.Type: ApplicationFiled: May 3, 2024Publication date: September 26, 2024Inventors: Kuo-Ju Chen, Chun-Hsien Huang, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
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Patent number: 12089929Abstract: A wearable photoluminescence sensor, which is portable and has improved sensitivity and accuracy, and a remote sensing apparatus comprising same, the disclosed wearable photoluminescence sensor includes a reflective support and a semipermeable filter disposed over and under translucent photodiodes, thus allows light of a second wavelength band, having the photoluminescence properties of getting lost or passing through, to be reflected again and thus maximally utilized, and thereby allows sensitivity and accuracy to be improved.Type: GrantFiled: August 23, 2019Date of Patent: September 17, 2024Assignee: LG DISPLAY CO., LTD.Inventors: Jin-Woo Park, Changjin Lim, Soyeon Lee, Su Seok Choi, Kiseok Chang, Jeong Min Moon, Soon Shin Jung, Sungpil Ryu, Jihwan Jung
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Patent number: 12095908Abstract: Disclosed herein are a key generation apparatus and method based on machine learning. The key generation method includes generating, by first and second key generation apparatuses, first and second commit values, and uploading the first commit value and the second commit value to an external repository, training, by the first and second key generation apparatuses, a neural network so as to match weight values with each other, sharing, by the first and second key generation apparatuses, the first and second commit values with each other, comparing shared first and second commit values with uploaded commit values, and then verifying the commit values, and when verification of the commit values has succeeded, generating, by the first and second key generation apparatuses, hash values using the matched weight value, verifying whether the hash values are identical to each other, and generating a session secret key based on a result of verification.Type: GrantFiled: November 4, 2021Date of Patent: September 17, 2024Assignee: Electronics and Telecommunications Research InstituteInventors: Nam-Su Jho, Ju-Young Kim, Ku-Young Chang
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Patent number: 12086919Abstract: A mixed reality system that includes a device and a base station that communicate via a wireless connection The device may include sensors that collect information about the user's environment and about the user. The information collected by the sensors may be transmitted to the base station via the wireless connection. The base station renders frames or slices based at least in part on the sensor information received from the device, encodes the frames or slices, and transmits the compressed frames or slices to the device for decoding and display. The base station may provide more computing power than conventional stand-alone systems, and the wireless connection does not tether the device to the base station as in conventional tethered systems. The system may implement methods and apparatus to maintain a target frame rate through the wireless link and to minimize latency in frame rendering, transmittal, and display.Type: GrantFiled: June 29, 2023Date of Patent: September 10, 2024Assignee: Apple Inc.Inventors: Arthur Y Zhang, Ray L. Chang, Timothy R. Oriol, Ling Su, Gurjeet S. Saund, Guy Cote, Jim C. Chou, Hao Pan, Tobias Eble, Avi Bar-Zeev, Sheng Zhang, Justin A. Hensley, Geoffrey Stahl
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Patent number: 12087918Abstract: A vehicle battery fire sensing apparatus and method includes a battery pack mounted to a vehicle structure and an electronic control unit. The battery pack includes a battery module including one or more battery cells, a battery management system configured to transmit a signal received from the battery module to the electronic control unit, and a battery pack case having a gas discharge portion configured to allow venting gas to be discharged therethrough. The vehicle battery fire sensing apparatus further includes a sensor provided at the vehicle structure, the sensor being configured to measure at least one of the temperature or pressure of the gas discharged from the gas discharge portion.Type: GrantFiled: June 29, 2020Date of Patent: September 10, 2024Assignee: LG ENERGY SOLUTION, LTD.Inventors: Tae Hwan Roh, Hyung Jun Ahn, Sung Gon Kim, Su Chang Kim, Hui Jeong Lee, Do Wung Son
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Patent number: 12087847Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first fin structure with a first height and a first width formed over the substrate, a second fin structure with a second height and a second width formed over the substrate, and an insulating stack formed over lower portions of the first and second fin structures. The second height can be substantially equal to the first height and the second width can be greater than the first width. A top surface of the insulating stack can be below top surfaces of the first and second fin structures.Type: GrantFiled: June 30, 2022Date of Patent: September 10, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Su-Hao Liu, Huicheng Chang, Chien-Tai Chan, Liang-Yin Chen, Yee-Chia Yeo, Szu-Ying Chen
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Patent number: 12087865Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.Type: GrantFiled: February 28, 2023Date of Patent: September 10, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
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Patent number: 12078597Abstract: A framework that includes a feature extractor and a cluster component for clustering is described herein. The framework supports (1) offline image-based unsupervised clustering that replaces time-consuming manual gating; (2) online image-based single cell sorting. During training, one or multiple cell image datasets with or without ground truth are used to train feature extractor, which is based on a neural network including several convolutional layers. Once trained, the feature extractor is used to extract features of cell images for unsupervised cell clustering and sorting. In addition, additional datasets may be used to further refine the feature extractor after it has been trained.Type: GrantFiled: April 5, 2021Date of Patent: September 3, 2024Assignees: SONY GROUP CORPORATION, SONY CORPORATION OF AMERICAInventors: Ming-Chang Liu, Su-Hui Chiang
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Publication number: 20240290750Abstract: A semiconductor package includes a substrate including a first region having a recess defined therein and a second region spaced apart from the first region. The second region does not include the recess. A three-dimensional (3D) integrated circuit structure is on the first region. The 3D integrated circuit structure includes a first semiconductor chip die and a second semiconductor chip die disposed on the first semiconductor chip die. A plurality of connecting members electrically connecting the first semiconductor chip die to the substrate. A first side of each connecting member of the plurality of connecting members directly contacts the first semiconductor chip die and a second side that is opposite to the first side directly contacts the first region. A memory structure is disposed in the second region and positioned side by side with the 3D integrated circuit structure.Type: ApplicationFiled: September 13, 2023Publication date: August 29, 2024Inventors: Hyoeun LEE, Hyunggil BAEK, Su-Chang LEE, Gyunghwan OH
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Publication number: 20240281494Abstract: Provided is a method of setting criteria for classification of data in an electronic apparatus, the method including identifying a subtask related to data classification, obtaining a plurality of data, based on a model associated with the subtask, obtaining a score associated with the subtask for each of the plurality of data, identifying category information associated with the subtask for each of the plurality of data, and based on the category information and the score, determining a threshold value corresponding to the subtask.Type: ApplicationFiled: December 15, 2023Publication date: August 22, 2024Applicant: Hyperconnect LLCInventors: Yong Su Baek, Dong Hyun Son, Beom Jun Shin, Byoung Gyu Lew, Bu Ru Chang, Kwang Hee Choi, Seung Woo Choi, Sung Joo Ha
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Publication number: 20240274527Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.Type: ApplicationFiled: March 26, 2024Publication date: August 15, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho