Abstract: A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.

Abstract: A display device includes a substrate including a display area and a peripheral area disposed around the display area. The peripheral area includes a bending region and a contact region adjacent to the bending region. A first connection line includes a first portion disposed in the contact region, and a second portion disposed in both the bending region and the contact region, and including a first layer and a second layer. At least part of the second layer of the second portion overlaps the first layer of the second portion. In the contact region, the first layer of the second portion is electrically connected to the first portion, and the second layer of the second portion is electrically connected to the first layer of the second portion.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device according to the present disclosure includes a deuterated organic electroluminescent material, so it can exhibit a low driving voltage and high luminous efficiency.

Abstract: The present invention relates to a polyester resin. The polyester resin is useful for bottles, sheets, multilayer sheets, stretched films and fiber applications due to excellent heat resistance and transparency, and in particular, the polyester resin has little deterioration of physical properties such as yellowing, etc., during processing. A process for making the polyester resin includes an esterification reaction between a dicarboxylic acid that includes terephthalic acid and a diol that includes isosorbide in the presence of a catalyst, followed by a polycondensation reaction on a product of the esterification reaction. In some embodiments, an initial mixing ratio of the dicarboxylic acid and the diol is between 1:1.02 and 1:1.04.

Abstract: A steroid sulfatase inhibitor provided by the present invention is a safe substance without toxicity and adverse effects, has inhibitory activity against various viruses, and thus is capable of effectively preventing, ameliorating, or treating viral infections or diseases caused by viral infections.

Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.

Abstract: One aspect of the present invention provides a compound in which a functional group capable of binding to a globulin Fc region or a physiologically active polypeptide is introduced at one end of a non-peptidic polymer and a functional group capable of a click reaction is introduced at the other end; a polypeptide conjugate in which a physiologically active polypeptide binds to one end of the compound; a physiologically active polypeptide conjugate in which a physiologically active polypeptide and an immunoglobulin Fc region bind to both ends thereof by using the compound as a linker; and methods for preparing the same compound, polypeptide conjugate, and physiologically active polypeptide conjugate.

Abstract: A display device includes first and second initialization voltage sources and first and second pixel circuits. The first initialization voltage source provides a first initialization voltage. The second initialization voltage source provides a second initialization voltage less than the first initialization voltage. The first pixel circuit includes a first organic light emitting diode. The second pixel circuit includes a second organic light emitting diode with an organic material having a band gap different from a band gap of an organic material in the first organic light emitting diode. The first pixel circuit is coupled to the first initialization voltage source and the second initialization voltage source. The second pixel circuit is coupled to a single initialization voltage source.

Abstract: It is disclosed a blood glucose prediction system and method using saliva-based artificial intelligence deep learning technique.

Abstract: A memory system is provided and includes memory chips in each of which a first state output pin is arranged and a memory controller in which a first state input pin connected to a first channel including first ways respectively connected to the first state output pins arranged in the memory chips is arranged. The memory controller checks a first internal state of each of the memory chips, based on one or more of a chip enable signal and a CE reduction command of the memory chips, and a second signal received through the first state input pin as a result of an AND operation of first signals output through the first state output pins, during a state check interval for checking respective states of the memory chips.

Abstract: Disclosed in the present document is an apparatus for aligning a semiconductor chip for packaging according to an embodiment, the apparatus may include a radiation source configured to irradiate a plurality of semiconductor chips with radiation; the plurality of semiconductor chips vertically disposed with respect to the ground; a radiation sensor configured to detect the radiation that has penetrated the plurality of semiconductor chips; and an alignment unit configured to align and bond the plurality of semiconductor chips based on detection information acquired by the radiation sensor.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: A display device includes a substrate having a pixel area and a peripheral area, a plurality of pixels disposed on the substrate in the pixel area, a plurality of data lines that supply a plurality of data signals to the pixels, a plurality of scan lines that supply a plurality of scan signals to the pixels, a plurality of power supply lines that supply a first voltage to the pixels, and first through third insulating layers. The first insulating layer is disposed on the substrate, the second insulating layer is disposed on the first insulating layer, and the third insulating layer is disposed on the second insulating layer. The scan lines are disposed below the third insulating layer on the substrate in the pixel area, and are disposed on the third insulating layer in the peripheral area.

Abstract: An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

Abstract: A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.

Abstract: Provided is a method for manufacturing an electrode for an electrochemical device comprising (S1) coating a slurry comprising a binder polymer and a conductive material on at least one surface of a current collector and drying to form an attachment enhancing layer; (S2) preparing a free-standing dry electrode film comprising a dry electrode active material and a dry binder; and (S3) stacking the free-standing dry electrode film on the attachment enhancing layer and applying heat and pressure in order to allow the binder polymer to permeate into a surface layer of the free-standing dry electrode film in contact with the attachment enhancing layer in order to adhere the free-standing dry electrode film to the attachment enhancing layer. Further provided are an electrode and a lithium secondary battery including the same.

Abstract: A semiconductor device includes a single poly non-volatile memory device including a sensing and selection gate structure, an erase gate structure, and a control gate structure. The sensing and selection gate structure includes a sensing gate and a selection gate, a bit line, a word line disposed on the selection gate, and a tunneling gate line. The erase gate structure includes an erase gate, and an erase gate line disposed near the erase gate. The control gate structure includes a control gate disposed on the substrate, and a control gate line disposed near the control gate. The sensing gate, the selection gate, the erase gate and the control gate are connected by one conductive layer. The erase gate structure implements a PMOS capacitor, an NMOS transistor, or a PMOS transistor. The semiconductor device includes a single poly non-volatile memory device including a separate program area and erase area.

Abstract: A super absorbent polymer according to the present invention has excellent dryness while maintaining excellent absorption performance, and thus is preferably used for hygienic materials such as diapers, and can exhibit excellent performance.

Abstract: A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.