Abstract: A display device includes a substrate including a first pixel area and a second pixel area, wherein the second pixel area is located at a side of the first pixel area, first pixels located in the first pixel area and connected to first scan lines, and second pixels located in the second pixel area and connected to second scan lines, wherein the first pixels and the second pixels include pixel rows extending in a first direction, and at least one of the second scan lines is inclined with respect to the first direction.

Abstract: A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, 0.0001 to 1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof, and 98 to 99.9998 wt % of water, and is effective at reducing the collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source.

Abstract: A display device includes a substrate having a pixel area with at least a first rounded corner portion and first to third non-pixel areas arranged sequentially along an outer circumference of the pixel area. An internal circuit in the first non-pixel area has a first end portion adjacent to the first rounded corner portion of the pixel area. The first end portion of the internal circuit is rounded in accordance with the first rounded corner portion. A plurality of routing wires are in the third non-pixel area below the pixel area. The routing wires extending to the pixel area via the second non-pixel area and the first non-pixel area. The routing wires include at least a first routing wire connected to the pixel area passing an area of the first end portion of the internal circuit.

Abstract: A display device includes a first pixel area having first pixels and a second pixel area having second pixels. Each first pixel includes a driving transistor initialized to a voltage of a first initialization power supply. Each second pixel includes a driving transistor initialized to a voltage of a second initialization power supply. The first initialization power supply and the second initialization power supply are set to different voltages. The first pixel area and the second pixel area have different widths.

Abstract: Disclosed is an organic light emitting device including a first electrode, a second electrode opposite to the first electrode, and at least one organic layer interposed between the first and second electrodes. The organic layer includes first and second compounds represented by Formulae A and B, respectively: The organic light emitting device exhibits low driving voltage, high efficiency, and long life. Due to these advantages, the organic light emitting device is useful in a variety of industrial applications, including displays and lighting systems.

Abstract: A display device includes a substrate including a pixel region and a peripheral region. A plurality of pixels is disposed in the pixel region of the substrate. Each of the plurality of pixels includes a light emitting element. Data lines and scan lines are connected to each of the plurality of pixels. A power line is configured to supply power to the plurality of pixels. The power line includes a plurality of first conductive lines and a plurality of second conductive lines intersecting the plurality of first conductive lines. The plurality of second conductive lines is arranged in a region between adjacent light emitting elements of the plurality of pixels. At least some of the plurality of second conductive lines extend in a direction oblique to a direction of extension of the data lines or the scan lines.

Abstract: Proposed is a process liquid composition for improving a lifting defect level of a photoresist pattern containing a surfactant and for reducing the number of defects of the photoresist pattern, the composition containing a surfactant and having a surface tension of 40 mN/m or less and a contact angle of 60° or smaller in the photoresist pattern having hydrophobicity represented by a contact angle of 70° or greater of water with respect to a photoresist surface in a photoresist pattern process.

Abstract: A display device includes first pixels configured to be positioned in a first pixel area and configured to be connected to first scan lines; first scan stage circuits configured to be positioned in a first peripheral area that is positioned outside the first pixel area and configured to supply first scan signals to the first scan lines; second pixels configured to be positioned in a second pixel area and configured to be connected to second scan lines; and second scan stage circuits configured to be positioned in a second peripheral area that is positioned outside the second pixel area and configured to supply second scan signals to the second scan lines. A gap between adjacent second scan stage circuits is larger than a gap between adjacent first scan stage circuits.

Abstract: A display device including a substrate including a first display region having a first width, a second display region having a second width smaller than the first width, a peripheral region at a periphery of the first and second display regions, and a dummy region in the peripheral region, a first pixel in the first display region, a second pixel in the second display region, a first control line connected to the first pixel and extending in the first display region, a second control line connected to the second pixel and extending in the second display region, and a dummy line connected to the second control line in the dummy region, wherein the second control line is at a first conductive layer on a first insulating layer, the dummy line is at a second conductive layer on a second insulating layer on the first conductive layer.

Abstract: A display device includes first and second initialization voltage sources and first and second pixel circuits. The first initialization voltage source provides a first initialization voltage. The second initialization voltage source provides a second initialization voltage less than the first initialization voltage. The first pixel circuit includes a first organic light emitting diode. The second pixel circuit includes a second organic light emitting diode with an organic material having a band gap different from a band gap of an organic material in the first organic light emitting diode. The first pixel circuit is coupled to the first initialization voltage source and the second initialization voltage source. The second pixel circuit is coupled to a single initialization voltage source.

Abstract: A display device includes a substrate including a pixel region and a peripheral region. A plurality of pixels is disposed in the pixel region of the substrate. Each of the plurality of pixels includes a light emitting element. Data lines and scan lines are connected to each of the plurality of pixels. A power line is configured to supply power to the plurality of pixels. The power line includes a plurality of first conductive lines and a plurality of second conductive lines intersecting the plurality of first conductive lines. The plurality of second conductive lines is arranged in a region between adjacent light emitting elements of the plurality of pixels. At least some of the plurality of second conductive lines extend in a direction oblique to a direction of extension of the data lines or the scan lines.

Abstract: Proposed is a composition for a thick hard mask suitable for use in a semiconductor lithography process, and particularly a spin-on carbon hard mask composition and a patterning method of forming a hard mask layer by applying the composition on an etching target layer through spin coating and baking the composition. The composition has high solubility characteristics, thereby enabling the formation of a thick hard mask which can exhibit high etching resistance to tolerate multiple etching processes and excellent mechanical properties.

Abstract: A display device is disclosed, and the display device includes a substrate including first to third display regions, the second and the third display regions being spaced from each other, each of the second and third display regions having an area smaller than that of the first display region and being continuous to the first display region, first to third pixels in the first to third display regions, first to third lines connected to the first to third pixels, and a dummy part configured to compensate for a difference between a load value of the first lines and load values of the second and third lines, wherein the second display region includes a first sub-region adjacent to the first display region and a second sub-region spaced from the first display region, and the third display region includes a third sub-region adjacent to the first display region and a fourth sub-region spaced from the first display region.

Abstract: The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

Abstract: A display device includes a substrate including a pixel area and a peripheral area located outside the pixel area; pixels located in the pixel area; power supply lines configured to provide an operating power to the pixels; and a plurality of data fanout wires configured to provide data signals to the pixels, wherein, in at least a portion of the peripheral area, the power supply lines and the plurality of data fanout wires are arranged on a same layer.

Abstract: Proposed is a thermoelement heat exchange module including a body and a thermoelement. The body has a cooling water flow path through which cooling water flows and has an opening which communicates with the cooling water flow path, and has an inlet which is formed at a first side thereof to communicate with the cooling water flow path and through which cooling water is introduced and has an outlet which is formed at a second side thereof to communicate with the cooling water flow path and through which cooling water is discharged. The thermoelement has a first surface thereof coupled to a portion where the opening of the body is formed such that the first surface is exposed on the cooling water flow path. The cooling water flow path has a portion having a relatively small hydraulic diameter in a flow direction of cooling water.

Abstract: A display device includes: a substrate including a first pixel area, a second pixel area having a smaller area than the first pixel area and connected to the first pixel area, and a peripheral area surrounding the first pixel area and the second pixel area; a first pixel provided in the first pixel area and a second pixel provided in the second pixel area; a first line connected to the first pixel and a second line connected to the second pixel; a dummy part disposed in the peripheral area, overlapping at least one of the first line and the second line and providing a parasitic capacitance that compensates for a difference in a load value between the first line and the second line; and a power supply line provided in the first and second pixel areas. The dummy part includes an insulating layer having at least one contact hole.

Abstract: A process of realizing a silicon micropattern having a large aspect ratio in a semiconductor-manufacturing process, and a novel wet etching method that includes treating an organic carbon film layer so that a hydrofluoric-acid-resistant material is selectively attached to the organic carbon film layer and then wet etching the same using an aqueous solution containing hydrofluoric acid, thus forming a pattern, are proposed. In the method of forming the pattern by wet etching, etching is performed so that an active region having a depth of several ?m in an object to be etched is not damaged when a pattern having a small CD is formed, thereby exhibiting an effect of providing a method of forming a micropattern.

Abstract: Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.

Abstract: Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.