Patents by Inventor Su-Tae Kim
Su-Tae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11998038Abstract: A method of manufacturing an aerosol generating rod includes providing a sheet of a first non-tobacco material by using at least one first conveying roller; crimping the sheet of the first non-tobacco material by using a first crimping device; applying an aerosol generating material to at least one surface of the sheet of the first non-tobacco material by using a first spray nozzle; applying a liquid containing a tobacco component to at least one surface of the sheet of the first non-tobacco material by using a slit nozzle; drying the sheet of the first non-tobacco material by using a drying device; and forming the aerosol generating rod by forming the sheet of the first non-tobacco material into a rod by using a rod forming device.Type: GrantFiled: September 16, 2020Date of Patent: June 4, 2024Assignee: KT&G CORPORATIONInventors: Eun Mi Jeoung, Sung Jong Ki, Min Kyu Kim, Young Joong Kim, In Su Park, John Tae Lee, Sun Hwan Jung
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Patent number: 11980229Abstract: An aerosol generating system includes: a cavity configured to accommodate at least a portion of a cigarette; a first induction coil located around the cavity; a second induction coil located around the cavity and connected to the first induction coil in parallel; and a battery configured to supply an alternating current to the first induction coil and the second induction coil, wherein the first induction coil and the second induction coil have different resonant frequencies.Type: GrantFiled: June 24, 2020Date of Patent: May 14, 2024Assignee: KT&G CORPORATIONInventors: In Su Park, Sung Jong Ki, Young Joong Kim, Jang Won Seo, John Tae Lee, Sun Hwan Jung, Eun Mi Jeoung
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Patent number: 11981618Abstract: The present invention relates to a novel p62 ligand compound, a stereoisomer, hydrate, solvate or prodrug thereof, and a pharmaceutical or food composition for preventing or treating proteinopathies comprising the same as an active ingredient. The p62 ligand compound according to the present invention can be usefully used as a pharmaceutical composition for the prevention, amelioration or treatment of various proteinopathies by activating autophagy in cells and thus selectively eliminating in vivo proteins, organelles and aggregates.Type: GrantFiled: July 24, 2019Date of Patent: May 14, 2024Assignee: AUTOTAC INC.Inventors: Yong Tae Kwon, Chang Hoon Ji, Srinivasrao Ganipisetti, Hee Yeon Kim, Su Ran Mun, Chan Hoon Jung, Eui Jung Jung, Ki Woon Sung
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Patent number: 11974600Abstract: An aerosol generating device includes a first vaporizer configured to generate a first aerosol by heating a first liquid composition, a second vaporizer configured to generate a second aerosol by heating a second liquid composition, and a controller controlling power supplied to the first vaporizer and the second vaporizer, based on a first mode, in which a smokeless aerosol is generated, and a second mode, in which a transport amount of nicotine included in the second liquid composition is adjusted.Type: GrantFiled: December 16, 2020Date of Patent: May 7, 2024Assignee: KT&G CORPORATIONInventors: In Su Park, Sung Jong Ki, Young Joong Kim, John Tae Lee, Sun Hwan Jung, Eun Mi Jeoung
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Publication number: 20240092141Abstract: An air conditioning device for a vehicle includes: a housing having an inside divided into an inflow space, a heat exchange space, and an outflow space, which are straightly arranged, and having a plurality of discharge ports, which communicates with an interior, at the inflow space; a blowing unit disposed at the inflow space of the housing and configured to blow air; a heat exchange unit disposed at the heat exchange space of the housing and configured to adjust a temperature of conditioned air by exchanging heat with air; and an opening-closing door disposed at the outflow space of the housing and configured to open and close the plurality of discharge ports such that conditioned air at an adjusted temperature selectively flows to the plurality of discharge ports. The air conditioning device adjusts the temperature of conditioned air for respective modes and reduces a flow resistance of air.Type: ApplicationFiled: March 8, 2023Publication date: March 21, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DOOWON CLIMATE CONTROL CO., LTD.Inventors: Kwang Ok Han, Young Tae Song, Yong Chul Kim, Gee Young Shin, Su Yeon Kang, Jae Sik Choi, Dae Hee Lee, Byeong Moo Jang, Ung Hwi Kim, Jae Won Cha, Won Jun Joung, Byung Guk An
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Patent number: 9935167Abstract: Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.Type: GrantFiled: September 19, 2016Date of Patent: April 3, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Hyun Noh, Su-Tae Kim, Jae-Hyun Yoo, Byeong-Ryeol Lee, Jong-Sung Jeon
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Patent number: 9548401Abstract: A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.Type: GrantFiled: April 29, 2015Date of Patent: January 17, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hyun Yoo, Jin-Hyun Noh, Su-Tae Kim, Byeong-Ryeol Lee, Seong-Hun Jang, Jong-Sung Jeon
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Publication number: 20170005162Abstract: Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.Type: ApplicationFiled: September 19, 2016Publication date: January 5, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jin-Hyun NOH, Su-Tae KIM, Jae-Hyun YOO, Byeong-Ryeol LEE, Jong-Sung JEON
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Patent number: 9472659Abstract: Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.Type: GrantFiled: July 30, 2015Date of Patent: October 18, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Hyun Noh, Su-Tae Kim, Jae-Hyun Yoo, Byeong-Ryeol Lee, Jong-Sung Jeon
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Publication number: 20160149057Abstract: A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.Type: ApplicationFiled: April 29, 2015Publication date: May 26, 2016Inventors: JAE-HYUN YOO, JIN-HYUN NOH, SU-TAE KIM, BYEONG-RYEOL LEE, SEONG-HUN JANG, JONG-SUNG JEON
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Publication number: 20160141413Abstract: Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.Type: ApplicationFiled: July 30, 2015Publication date: May 19, 2016Inventors: Jin-Hyun NOH, Su-Tae KIM, Jae-Hyun YOO, Byeong-Ryeol LEE, Jong-Sung JEON
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Publication number: 20140246754Abstract: Provided is a capacitor of a semiconductor device. The capacitor can includes a plurality of parallel lower conductive lines in parallel and a plurality of upper conductive lines on the lower conductive lines. Each lower conductive line can have a line width that is different than that of the upper conductive line adjacent to it.Type: ApplicationFiled: March 14, 2013Publication date: September 4, 2014Applicant: DONGBU HITEK CO., LTD.Inventor: Su Tae KIM
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Publication number: 20100052095Abstract: An inductor for semiconductor devices and a method of fabricating the same are disclosed. Through an improved electrical connection between a metal wiring and an inductor line, an improved Q-index and minimized energy loss in a substrate can be accomplished, and a parasitic capacitance can be minimized. For this, the inductor which may include a substrate and an insulating layer formed over the substrate and containing a metal wiring therein. A metal pad may be formed over the insulating layer. An inductor line may be formed over the insulating layer and connected to the metal pad. A pad contact, a metal layer and a via contact may be sequentially stacked within the insulating layer between the metal wiring and the metal pad.Type: ApplicationFiled: August 27, 2008Publication date: March 4, 2010Inventor: Su-Tae Kim
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Publication number: 20090152649Abstract: Provided is a semiconductor device of a multi-finger type. The semiconductor device comprises an active region, a guard ring, a source electrode, at least one gate electrode, and at least one drain electrode. The active region includes a source region, a drain region, and a channel region. The guard ring surrounds the active region. The source electrode is connected to the guard ring and a bulk region. The source electrode includes electrode bodies disposed on a first side of the active region and a second side of the active region opposite the first side, and fingers connecting the two electrode bodies to branch through the source region. The gate electrode can be provided in plurality as fingers on the channel region. One or more gate electrode fingers can be connected to each other through a set of vias. The drain electrode can be provided in plurality as fingers branching on the drain region.Type: ApplicationFiled: October 8, 2008Publication date: June 18, 2009Inventor: Su Tae Kim
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Publication number: 20090152675Abstract: In a semiconductor device having a first region formed with the inductor and a second region formed with transistors, the inductor includes a deep well region formed in the silicon substrate beneath the first and second regions, a well region formed on the deep well region in the second region, N type shield regions formed to have the same depth as the well region, and P type shield regions arranged to alternate with the N type shield regions, the transistors formed on the silicon substrate in the second region, an insulating film formed over an entire surface of the silicon substrate such that the insulating film covers the transistors, and a metal line formed on the insulating film in the first region such that the metal line corresponds to the N and P type shield regions.Type: ApplicationFiled: December 9, 2008Publication date: June 18, 2009Inventor: Su-Tae Kim
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Publication number: 20080315964Abstract: A tunable active inductor and a voltage controlled oscillator (VCO) are provided. The tunable active inductor includes a first current source coupled to a power source, a first metal-oxide semiconductor (MOS) transistor including a drain coupled to the first current source and a gate coupled to a first bias voltage, a second MOS transistor including a drain coupled to the power source and a gate coupled to the drain of the first MOS transistor, the gate of the second MOS and the drain of the first MOS being coupled to a second bias voltage, a resonator coupled to a source of the second MOS transistor, and a second current source coupled to the resonator. The VCO employs the tunable active inductor to freely vary the oscillation range of the VCO in a high frequency band.Type: ApplicationFiled: June 20, 2008Publication date: December 25, 2008Inventor: Su Tae Kim