Abstract: A method for manufacturing a self-biased circulator includes cooling a nanocomposite material to a magnetization temperature below 200 K, applying an external magnetic field to the nanocomposite material to form a magnetic nanocomposite material, providing the magnetic nanocomposite material in a semiconductor substrate, and providing one or more metal layers over the magnetic nanocomposite material to form a circulator. By cooling and then magnetizing the nanocomposite material, a performance of the circulator may be significantly improved.

Abstract: Enhanced air core transmission lines and transformers are disclosed. A transmission line or transformer is disposed on a dielectric substrate, with a first planar conductor on the dielectric substrate and a second planar conductor suspended above the first planar conductor. A set of support posts suspends the second planar conductor above the first planar conductor. Thermal performance of the transmission line or transformer is improved by having each of the set of support posts include a width which exceeds any gap between support posts. In some examples, openings are formed in the second planar conductor and may facilitate etching or other processes of forming the transmission line or transformer.

Abstract: A method for manufacturing a self-biased circulator includes cooling a nanocomposite material to a magnetization temperature below 200 K, applying an external magnetic field to the nanocomposite material to form a magnetic nanocomposite material, providing the magnetic nanocomposite material in a semiconductor substrate, and providing one or more metal layers over the magnetic nanocomposite material to form a circulator. By cooling and then magnetizing the nanocomposite material, a performance of the circulator may be significantly improved.

Abstract: Enhanced air core transmission lines and transformers are disclosed. A transmission line or transformer is disposed on a dielectric substrate, with a first planar conductor on the dielectric substrate and a second planar conductor suspended above the first planar conductor. A set of support posts suspends the second planar conductor above the first planar conductor. Thermal performance of the transmission line or transformer is improved by having each of the set of support posts include a width which exceeds any gap between support posts. In some examples, openings are formed in the second planar conductor and may facilitate etching or other processes of forming the transmission line or transformer.

Abstract: The present disclosure relates to a vertical gallium-nitride (GaN) power field-effect transistor (FET) with a field plate structure. The vertical GaN power FET includes a conductive substrate, a drift region, a field plate structure, a channel region with tapered side walls, a gate dielectric region, a gate contact, a drain contact and source contacts. The field plate structure includes a lower layer formed of pi p-type graded AlGaN and a upper layer formed of p-type GaN. The field plate structure utilizes the charge separation at the interface between the lower layer and the upper layer to achieve high breakdown voltage.

Abstract: The present disclosure relates to a vertical gallium-nitride (GaN) power field-effect transistor (FET) with a field plate structure. The vertical GaN power FET includes a conductive substrate, a drift region, a field plate structure, a channel region with tapered side walls, a gate dielectric region, a gate contact, a drain contact and source contacts. The field plate structure includes a lower layer formed of pi p-type graded AlGaN and a upper layer formed of p-type GaN. The field plate structure utilizes the charge separation at the interface between the lower layer and the upper layer to achieve high breakdown voltage.