Patents by Inventor Subramania Krishnakumar

Subramania Krishnakumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6123765
    Abstract: A delivery system and method for providing a gaseous chemical is provided. The system comprises a single bubbler 12 having a chamber 13 for containing a liquid chemical, at least one inlet tube 14 for providing a carrier gas to said chamber, and one outlet tube 16 for providing the gaseous chemical. A liquid chemical supply line 25 conveys the liquid chemical to said chamber. A bubbler is in contact with weight measuring device 24 for weighing the bubbler and generating an output signal responsive to the measured weight. A liquid chemical controller 20 is operatively coupled to said bubbler and said supply line for filling and continuously maintaining a preselected level of the liquid chemical in said chamber responsive to said output signal.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: September 26, 2000
    Assignee: Mitsubishi Silicon America
    Inventors: Drew Sinha, Jack Harlan Coker, Subramania Krishnakumar
  • Patent number: 5242707
    Abstract: A system and method are disclosed for producing electro-optic components with transparent, ferroelectric PLZT (perovskite) film characteristics, without lead diffusion. In particular, the fabrication of PLZT-on-sapphire electro-optic components for devices such as spatial light modulators, integrated infrared detectors, and optoelectronic integrated circuits is disclosed, permitting integration of such devices with semiconductor devices having the same substrate, such as silicon-on-sapphire circuits. The system comprises a PLZT film deposition apparatus, a silicon dioxide deposition apparatus, an annealing apparatus, and an optional plasma etching apparatus. During film deposition, material from a PLZT target (source) of suitable (9/65/35) composition is deposited on the substrate and is epitaxially grown on the R-plane (1102) of the substrate, forming a non-ferroelectric, pyrochloric film. The substrate and film are then placed in a silicon dioxide (SiO.sub.2) deposition chamber where SiO.sub.
    Type: Grant
    Filed: December 21, 1990
    Date of Patent: September 7, 1993
    Assignee: Regents of the University of California
    Inventors: Sadik C. Esener, Sing H. Lee, Subramania Krishnakumar, Volkan H. Ozguz, Chi Fan