Patents by Inventor Sudheer S. Sridharamurthy
Sudheer S. Sridharamurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10267636Abstract: A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.Type: GrantFiled: January 4, 2016Date of Patent: April 23, 2019Assignee: mCube, Inc.Inventors: Sudheer S. Sridharamurthy, Tony Maraldo, Zheng-Yao Sun, Wenhua Zhang, Te-Hsi Terrence Lee, Sanjay Bhandari, Joseph Rastegar
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Patent number: 10107625Abstract: A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.Type: GrantFiled: February 24, 2017Date of Patent: October 23, 2018Assignee: mCube Inc.Inventors: Sanjay Bhandari, Ali J. Rastegar, Sudheer S. Sridharamurthy
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Patent number: 10046964Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.Type: GrantFiled: June 11, 2014Date of Patent: August 14, 2018Assignee: mCube Inc.Inventors: Te-Hsi “Terrence” Lee, Sudheer S. Sridharamurthy, Shingo Yoneoka, Wenhua Zhang
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Patent number: 9950921Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.Type: GrantFiled: November 2, 2015Date of Patent: April 24, 2018Assignee: mCube Inc.Inventors: Te-Hsi “Terrence” Lee, Sudheer S. Sridharamurthy, Shingo Yoneoka, Wenhua Zhang
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Patent number: 9950924Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.Type: GrantFiled: December 30, 2015Date of Patent: April 24, 2018Assignee: mCube, Inc.Inventors: Sudheer S. Sridharamurthy, Te-Hse Terrence Lee, Ali J. Rastegar, Mugurel Stancu, Xiao Charles Yang
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Publication number: 20170167875Abstract: A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.Type: ApplicationFiled: February 24, 2017Publication date: June 15, 2017Inventors: SANJAY BHANDARI, Ali J. Rastegar, Sudheer S. Sridharamurthy
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Patent number: 9612119Abstract: A system can include a MEMS gyroscope having a MEMS resonator overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. The system incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.Type: GrantFiled: January 17, 2014Date of Patent: April 4, 2017Assignee: mCube Inc.Inventors: Sanjay Bhandari, Ali J. Rastegar, Sudheer S. Sridharamurthy
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Publication number: 20160176708Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.Type: ApplicationFiled: December 30, 2015Publication date: June 23, 2016Inventors: Sudheer S. Sridharamurthy, Te-Hse Terrence Lee, Ali J. Rastegar, Mugurel Stancu, Xiao Charles Yang
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Patent number: 9276080Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.Type: GrantFiled: March 7, 2013Date of Patent: March 1, 2016Assignee: mCube, Inc.Inventors: Sudheer S. Sridharamurthy, Te-Hse Terrence Lee, Ali J. Rastegar, Mugurel Stancu, Xiao Charles Yang
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Publication number: 20160052777Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.Type: ApplicationFiled: November 2, 2015Publication date: February 25, 2016Inventors: TE-HSI "TERRENCE" LEE, SUDHEER S. SRIDHARAMURTHY, SHINGO YONEOKA, WENHUA ZHANG
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Publication number: 20150276406Abstract: A system can include a MEMS gyroscope having a MEMS resonator overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. The system incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.Type: ApplicationFiled: January 17, 2014Publication date: October 1, 2015Applicant: mCube Inc.Inventors: ALI J. RASTEGAR, SANJAY BHANDARI, SUDHEER S. SRIDHARAMURTHY
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Publication number: 20150241479Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.Type: ApplicationFiled: June 20, 2013Publication date: August 27, 2015Inventors: DANIEL N. KOURY, JR., SUDHEER S. SRIDHARAMURTHY
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Publication number: 20140370638Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.Type: ApplicationFiled: June 11, 2014Publication date: December 18, 2014Inventors: TE-HSI "TERRENCE" LEE, Sudheer S. Sridharamurthy, Shingo Yoneoka, Wenhua Zhang
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Publication number: 20130236988Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.Type: ApplicationFiled: March 7, 2013Publication date: September 12, 2013Applicant: MCube, Inc.Inventors: Sudheer S. Sridharamurthy, Te-Hse Terrence Lee, Ali J. Rastegar, Mugurel Stancu, Xiao Charles Yang
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Patent number: 7722816Abstract: A detection device and method for detecting the presence of an agent in a fluid. The device includes a membrane having first and second sides. The membrane allows a stimulus, e.g. ultraviolet light, to dissolve in response to presence of the agent. A source is positioned on a first side of the membrane. The source sources the stimulus toward the membrane. A detection structure is disposed on the second side of the membrane for detecting the stimulus. The detection structure generates an output voltage in response to the intensity of the stimulus detected. As the membrane dissolves, the intensity of the stimulus detected changes.Type: GrantFiled: May 24, 2007Date of Patent: May 25, 2010Assignee: Wisconsin Alumni Research FoundationInventors: Hongrui Jiang, Sudheer S. Sridharamurthy
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Publication number: 20080292503Abstract: A detection device and method for detecting the presence of an agent in a fluid. The device includes a membrane having first and second sides. The membrane allows a stimulus, e.g. ultraviolet light, to dissolve in response to presence of the agent. A source is positioned on a first side of the membrane. The source sources the stimulus toward the membrane. A detection structure is disposed on the second side of the membrane for detecting the stimulus. The detection structure generates an output voltage in response to the intensity of the stimulus detected. As the membrane dissolves, the intensity of the stimulus detected changes.Type: ApplicationFiled: May 24, 2007Publication date: November 27, 2008Inventors: Hongrui Jiang, Sudheer S. Sridharamurthy