Patents by Inventor Sudhir G. Subramanya

Sudhir G. Subramanya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for the automated testing of reticle feature geometries
    Patent number: 6642529
    Abstract: A method for inspecting features on a reticle is provided. The method includes providing a layout design of a test feature and transferring the layout design of the test feature onto the reticle. After the test feature is transferred onto the reticle, an image of the transferred layout design is captured to determine whether or not the transfer is acceptable. This determination is made by comparing the captured image of the transferred layout design against the layout design of the test feature. The comparison ascertains deviations between the captured image and the layout design and determines if the deviations fall within a user specified range.
    Type: Grant
    Filed: March 28, 2000
    Date of Patent: November 4, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Sudhir G. Subramanya, Clifford Takemoto, Satyendra S. Sethi
  • Process for growing epitaxial gallium nitride and composite wafers
    Patent number: 6563144
    Abstract: A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of &mgr;>400 cm2/Vs for an electron background concentration of 4×1017 cm−3.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: May 13, 2003
    Assignee: The Regents of the University of California
    Inventors: Eicke R. Weber, Sudhir G. Subramanya, Yihwan Kim, Joachim Kruger
  • Process for growing epitaxial gallium nitride and composite wafers
    Publication number: 20020005566
    Abstract: A novel growth procedure to grow epitaxial Group m metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of &mgr;>400 cm2/Vs for an electron background concentration of 4×1017 cm−3.
    Type: Application
    Filed: April 2, 2001
    Publication date: January 17, 2002
    Inventors: Eicke R. Weber, Sudhir G. Subramanya, Yihwan Kim, Joachim Kruger