Abstract: A method of manufacturing a magnetic wire example includes depositing a magnetic film, which has a composition that enables measuring motion of a magnetic domain wall in the magnetic film, on/above a silicon substrate, forming the magnetic film on the silicon substrate on which the magnetic film is deposited using a wire pattern and an electrode pattern of a certain specification, shielding a central part of the magnetic wire in a photolithography method by an edge milling pattern which corresponds to a predetermined specification, and ablating an edge portion of the magnetic wire which is not shielded by an ion milling.

Abstract: A spin-orbit torque (SOT) measuring apparatus includes a photoelastic modulator (PEM) configured to periodically modulate a polarization direction of linearly polarized incident light and emit a periodically modulated light, a first polarization rotator configured to rotate a polarization direction of the periodically modulated light, a voltage generator configured to generate an AC current to a sample to which light with the rotated polarization direction is to be emitted, a prism configured to split light reflected into first light and second light having different polarization directions, a balanced detector configured to output a signal corresponding to an intensity difference between the first light and the second light, a changing circuit configured to change a frequency component to the intensity difference, and an amplitude measurer configured to measure an amplitude of a frequency component corresponding to a modulation frequency of the PEM with the changed frequency component.

Abstract: A magnetic domain wall (MDW) motion device. The MDW motion device may include a ferromagnetic layer with perpendicular magnetic anisotropy and non-magnetic metal layers extending parallel to and in contact with the ferromagnetic layer. The ferromagnetic layer may include first ferromagnetic regions, which are arranged in an extension direction of the ferromagnetic layer, and second ferromagnetic regions, which are provided between an adjacent pair of the first ferromagnetic regions. The first and second ferromagnetic regions may have spin torque coefficients of opposite signs, and an MDW positioned near an interface between the first and second ferromagnetic regions may be moved by an in-plane current flowing through the non-magnetic metal layer.

Abstract: A magnetic domain wall (MDW) motion device. The MDW motion device may include a ferromagnetic layer with perpendicular magnetic anisotropy and non-magnetic metal layers extending parallel to and in contact with the ferromagnetic layer. The ferromagnetic layer may include first ferromagnetic regions, which are arranged in an extension direction of the ferromagnetic layer, and second ferromagnetic regions, which are provided between an adjacent pair of the first ferromagnetic regions. The first and second ferromagnetic regions may have spin torque coefficients of opposite signs, and an MDW positioned near an interface between the first and second ferromagnetic regions may be moved by an in-plane current flowing through the non-magnetic metal layer.

Abstract: An information storage device includes a magnetic track and a pinning element for pinning the magnetic domain wall. The magnetic track includes a plurality of magnetic domains and a magnetic domain wall arranged between each pair of adjacent magnetic domains. The pinning element is configured to apply a magnetic field to pin the magnetic domain wall to the magnetic track. The magnetic field may have the same magnetization direction as the magnetic domain wall.

Abstract: A magneto-optical microscope magnetometer capable of simultaneously measuring a hysteresis loop and activation magnetic moment of a submicrometer-scale local area (about 0.3×0.3 &mgr;m). An electromagnet capable of applying a magnetic field to a magnetic material is attached to a polarizing optical microscope capable of observing a magnetized state of the magnetic material, such that images of the microscope varying with the strength of the applied magnetic field are grabbed in real time by a charge coupled device camera and then analyzed. The magneto-optical microscope magnetometer can measure a hysteresis loop and activation magnetic moment in a submicrometer-scale local area observed by the polarizing optical microscope. Further, the magneto-optical microscope magnetometer can measure hysteresis loops and activation magnetic moments simultaneously with respect to all CCD pixels of the camera and observe coercivity and activation magnetic moment distributions of the entire magnetic material.