Abstract: A composite substrate for a semiconductor includes a handle substrate 11 and a donor substrate bonded to a surface of the handle substrate 11 directly or through a bonding layer. The handle substrate 11 is composed of an insulating polycrystalline material, a surface 15 of the handle substrate 11 has a microscopic central line average surface roughness Ra of 5 nm or smaller, and recesses 6 are formed on the surface of the handle substrate.

Abstract: An alumina purity of translucent polycrystalline alumina forming a handle substrate is 99.9 percent or higher, and a porosity of the polycrystalline alumina is 0.01% or more and 0.1% or less. A number of pores, each having a size of 0.5 ?m or larger and included in a surface region on a side of a bonding face of the handle substrate is 0.5 times or less of a number of pores, each having a size of 0.1 ?m or larger and 0.3 ?m or smaller and contained in the surface region.

Abstract: It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 ?m, and a diameter of the through hole is 20 to 100 ?m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 ?m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 ?m.

Abstract: It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Abstract: A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

Abstract: A handle substrate is composed of a translucent alumina sintered body containing a sintering aid including at least magnesium. A concentration of magnesium at a bonding face of the handle substrate to a donor substrate is half or less of an average concentration of magnesium of the handle substrate.

Abstract: A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 ?m and a central part with an average grain size of 10 to 50 ?m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

Abstract: In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate 1A or 1B for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notch 2A or 2B in its outer peripheral portion. The notch is formed with an as-sintered surface.

Abstract: It is provided an insulating substrate including through holes 2 for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 ?m , and a diameter of the through hole is 20 to 100 ?m . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 ?m , respectively.

Abstract: A handle substrate 1 is made of a translucent ceramics. An average density of pores having a size of 0.6 to 3.0 ?m included in a surface region 2A on the side of a bonding face 1a of the handle substrate 1 is 50 counts/mm2 or smaller. It is formed a region 3, whose average density of pores having a size of 0.5 to 3.0 ?m is 100 counts/mm2 or larger, in the handle substrate 1. The translucent ceramics has an average grain size of 5 to 60 ?m.

Abstract: A handle substrate 11 or 11A is formed of an insulating polycrystalline material, the handle substrate has a surface 15 having a microscopic central line average surface roughness Ra of 5 nm or smaller, and height differences 3 are provided between exposed faces 2a of crystal grains 2 exposing to said surface 15.

Abstract: A composite substrate for a semiconductor includes a handle substrate 11 and a donor substrate bonded to a surface of the handle substrate 11 directly or through a bonding layer. The handle substrate 11 is composed of an insulating polycrystalline material, a surface 15 of the handle substrate 11 has a microscopic central line average surface roughness Ra of 5 nm or smaller, and recesses 6 are formed on the surface of the handle substrate.

Abstract: A composite substrate 10 includes a supporting substrate 12 and a piezoelectric substrate 14 which are bonded to each other. In this embodiment, the supporting substrate 12 and the piezoelectric substrate 14 are bonded to each other by an adhesive layer 16. In the composite substrate 10, since the supporting substrate 12 is composed of a translucent alumina ceramic, alignment is easily performed during FCB compared with the case where the supporting substrate is composed of an opaque ceramic. Furthermore, preferably, the linear transmittance and the total light transmittance from the front of the supporting substrate 12 in the visible light range (360 to 750 nm) are 10% or more and 70% or more, respectively.

Abstract: A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate 12 is 60% or more. The average crystal grain size of the supporting substrate 12 is 10 to 35 ?m. The semiconductor substrate 14 is a single crystal silicon substrate. Such a composite wafer 10 has insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.

Abstract: A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate 12 is 60% or more. The average crystal grain size of the supporting substrate 12 is 10 to ?m. The semiconductor substrate 14 is a single crystal silicon substrate. Such a composite wafer 10 has insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.

Abstract: The present invention relates to a ceramic tube for a high-intensity discharge lamp, comprising a hollow member and a plug member. The hollow member contains a substantially cylindrical body and a closure for closing one end of the body, and the plug member is inserted into an insertion opening formed at the other end of the body. Before the insertion of the plug member, the insertion opening has a tapered portion with a diameter decreasing in the direction from the open end to the inside at least in an area into which the plug member is inserted. After the insertion of the plug member, an outer wall of the plug member is bonded to an inner wall of the insertion opening.

Abstract: A ceramic base plate is divided into a plurality of substrate regions 2 each having corner part 8. A dividing groove 7 is formed between the substrate regions 2 adjacent with each other. The corner part 8 of each of the substrate regions 2 faces a spacing 9B communicated with the dividing groove 7. At least a part of the corner part 8 is arc-shaped. The arc-shaped part of the corner part is tangent to a center line 7a of the dividing groove 7 at a cross point “P” of the spacing 9B with the dividing groove 7. The ceramic base plate is broken along the dividing groove 7 to produce ceramic substrates.

Abstract: A translucent polycrystalline sintered body is mainly composed of an alumina, is suitable for the manufacture of an arc tube for a high-intensity discharge lamp, and has an average grain diameter of 35 to 70 ?m, preferably 50 to 60 ?m. In a case where the sintered body is in a 0.5-mm-thick flat plate shape, the in-line transmittance of the sintered body is 30% or more, preferably 50% or more. In this case, the ratio between maximum and minimum in-line transmittance values is 2:1 to 1:1 in the visible region of 360 to 830 nm. The bending strength of the sintered body is 250 MPa or more, preferably 300 MPa or more.

Abstract: An arc tube includes a light emitting body for light therein and a ceramic tube having a first capillary and a second capillary integral with respective opposite sides of the light emitting body. A first electrode is inserted and sealed in the first capillary, and a second electrode is inserted and sealed in the second capillary. The first electrode is sealed in the first capillary by shrink fitting.

Abstract: The present invention relates to a ceramic tube for a high-intensity discharge lamp, comprising a hollow member and a plug member. The hollow member contains a substantially cylindrical body and a closure for closing one end of the body, and the plug member is inserted into an insertion opening formed at the other end of the body. Before the insertion of the plug member, the insertion opening has a tapered portion with a diameter decreasing in the direction from the open end to the inside at least in an area into which the plug member is inserted. After the insertion of the plug member, an outer wall of the plug member is bonded to an inner wall of the insertion opening.