Abstract: In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E?L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.

Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.

Abstract: In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E?L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.

Abstract: The liquid crystal display device according to this invention includes a control structure provided at each of or one of a liquid crystal side of a first substrate and a liquid crystal side of a second substrate to control a tilt direction of a liquid crystal upon application of a voltage to a liquid crystal layer, a first domain where a liquid crystal tilts in one direction upon application of a voltage to a liquid crystal layer, and a second domain where a liquid crystal tilts in a direction different from the tilt direction of the liquid crystal in the first domain by substantially 180°. Herein, an angle formed by the tilt direction of the liquid crystal in the first domain and a horizontal direction of a screen in the liquid crystal display device falls within a range between 22° and 39° or a range between 51° and 68°.

Abstract: A material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density. 28 to 35% by weight of at least one rare earth element selected from the group consisting of neodymium, praseodymium, dysprosium, terbium, and holmium, 0.9 to 1.3% by weight of boron, 0.25 to 3% by weight of phosphorus, iron, and inevitable impurities. It can further comprise 0.1 to 3.6% by weight of cobalt and 0.02 to 0.25% by weight of copper.

Abstract: A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not a hydrogen atom.

Abstract: A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4): wherein R1 to R4 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkyiphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), provided that at least one of R1 to R4 is not a hydrogen atom.

Abstract: An electronic device assembled using a coupler which has an electroconductive region and a resin region on the surface. Flexibility of the resin region absorbs stress caused by difference in thermal expansion coefficient between an organic printed circuit board and a semiconductor chip through the deformation of the electroconductive region. As a result, formation of cracking in the coupler is avoided. It is preferable that the resin region occupies from 20 to 80% of the total surface area of the coupler. The coupler may be formed from a molten blend of the heat resistant resin and a joining metal. The coupler may also be formed by molding a blend of the heat resistant resin and metal powder, wherein the metal powder locating on the surface of the coupler have a joining metal joined thereto.

Abstract: A magnetic interaction is calculated by expressing a localized magnetic orbital as a linear combination of molecular orbitals and determining a localized magnetic orbital to be calculated from a maximum overlap condition evaluated between a reference orbital localized in anatomic orbital and the localized magnetic orbital. Another magnetic interaction is calculated by expressing a localized magnetic crystal orbital as a linear combination of crystal orbitals and determining a localized magnetic crystal orbital to be calculated from the maximum overlap condition.

Abstract: The purpose of the present invention is to provide a material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density.

Abstract: A magnetic interaction is calculated by expressing a localized magnetic orbital as a linear combination of molecular orbitals and determining a localized magnetic orbital to be calculated from a maximum overlap condition evaluated between a reference orbital localized in anatomic orbital and the localized magnetic orbital. Another magnetic interaction is calculated by expressing a localized magnetic crystal orbital as a linear combination of crystal orbitals and determining a localized magnetic crystal orbital to be calculated from the maximum overlap condition.

Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): 1

Abstract: The object of the present invention is to provide a polishing agent for processing semiconductor, which can control coagulation and sedimentation and has stable and re-productive polishing properties under a proper dispersing condition to prevent generation of polishing flaw. The polishing agent for processing semiconductor comprises a compound having glucose structure, polishing particles and water.

Abstract: An electronic device assembled using a coupler which has an electroconductive region and a resin region on the surface. Flexibility of the resin region absorbs stress caused by difference in thermal expansion coefficient between an organic printed circuit board and a semiconductor chip through the deformation of the electroconductive region. As a result, formation of cracking in the coupler is avoided. It is preferable that the resin region occupies from 20 to 80% of the total surface area of the coupler. The coupler may be formed from a molten blend of the heat resistant resin and a joining metal. The coupler may also be formed by molding a blend of the heat resistant resin and metal powder, wherein the metal powder locating on the surface of the coupler have a joining metal joined thereto.

Abstract: The object of the present invention is to provide a polishing agent for processing semiconductor, which can control coagulation and sedimentation and has stable and re-productive polishing properties under a proper dispersing condition to prevent generation of polishing flaw. The polishing agent for processing semiconductor comprises a compound having glucose structure, polishing particles and water.

Abstract: A recording material having a recording layer with microcapsules therein on a support, and a recording method. The microcapsules constituting the recording layer each are composed of a core, a heat-responsive resin layer covering the core, and a shell enveloping the heat-responsive resin layer. The shell is made of a material sensitive to and curable with light having a predetermined wavelength, the core contains a developer (or a dye precursor), and the shell contains a dye precursor (or a developer).

Abstract: An electrophotographic photosensitive member which comprises an aluminum substrate having an aluminum oxide film at its surface, and, formed sequentially on the substrate, an intermediate layer and a photosensitive layer which contains a photoconductive material, wherein the intermediate layer contains from 5 to 20 wt % of a photoconductive material and has a thickness of from 0.5 to 5 .mu.m, and the resistivity of a laminate of the aluminum oxide film and the intermediate layer is from 10.sup.9 to 3.times.10.sup.10 .OMEGA./3.14 cm.sup.2 when a DC voltage of 20 V is applied.

Abstract: A photosensitive member for electrophotography having excellent electrophotographic characteristics such as chargeability, photosensitivity and dark attenuation, excellent corona resistance and excellent durability, which comprises an electrically conductive support and a photosensitive layer containing a resin binder and particles of a photoconductive phthalocyanine compound dispersed in said binder, said photosensitive layer containing at least one member selected from the group consisting of an electron acceptive material, a coupling agent, an antioxidant and a hydroxyl group-containing polymer.

Abstract: An electrophotographic photosensitive member which comprises an aluminum substrate having an aluminum oxide film at its surface and a photosensitive layer formed on the substrate, which contains a photoconductive material, wherein the aluminum oxide film has a thickness of from 3 to 15 .mu.m, and a resistivity of from 10.sup.9 to 3.times.10.sup.10 .OMEGA./3.14 cm.sup.2 when a DC voltage of 20 V is applied, and an impedance of from 1 to 20 M.OMEGA. at 100 Hz.

Abstract: An object of the present invention is to provide a photosensitive member having an excellent durability. A sensitizing solution is prepared by adding a polyester resin (resin A) synthesized using an isophthalic acid, neopentyl glycol, phthalic anhydride and adipic acid, other polyester resins, an X-form metal free phthalocyanine as a phthalocyanine type photoconductive compound and a curing agent to a solvent, and is dip-coated on a polyamide layer on an aluminum plate and then dried and cured to give a photosensitive member.