Abstract: An oscillation circuit capable of outputting an oscillation signal of constant frequency free from the influence of source voltage, temperature, and nonuniformity and fluctuation in inverter threshold voltage. An inverter inverts a voltage applied to one end of a capacitive element and outputs the inverted voltage to transistors and an inverter. A constant voltage source outputs a constant voltage free from the influence of source voltage and temperature. The transistors connect the other end of the capacitive element to the constant voltage source or ground in accordance with the voltage output from the first-mentioned inverter. A constant current source causes a constant current free from the influence of the source voltage and temperature to flow into or out of the one end of the capacitive element in accordance with the voltage from the second-mentioned inverter connected to the first-mentioned inverter.

Abstract: A crystal oscillation circuit has a reduced circuit area and enables to stably oscillate at low consumed current. The crystal oscillation circuit includes an oscillating amplifier and a constant voltage generator. The oscillating amplifier excites a resonator composed of a resistor, a crystal oscillator and a capacitor. The constant voltage generator includes a one-stage differential circuit composed of a transistor and a capacitor for suppressing transient fluctuation of a constant voltage Vreg for generating the constant voltage Vreg served as a supply voltage for the oscillating amplifier. By generating the constant voltage Vreg through the one-stage differential circuit, the phase lag of the constant voltage Vreg reaches 90 degrees at most. This eliminates the necessity of a phase compensation capacitor, resulting in making the circuit area smaller and realizing the stable oscillation at low consumed current.

Abstract: A semiconductor device is disclosed including a current generator circuit that generates a first current substantially proportional to an absolute temperature, the first current being determined by a size ratio of a MOS transistor, and by a resistor; and a starting-up circuit that causes the current generator circuit to generate the first current at a stable working point of the current generator circuit, wherein while the current generator circuit operates at the stable working point, a current that flows through the starting-up circuit is determined by a diffusion resistance and a MOS transistor. When the current generator circuit starts operating at a stable operating point, resistance of the diffusion resistor and a MOS transistor connected in series determines a current that flows through a starting-up circuit. According to the above arrangements, the power consumption of the circuit can be reduced by increasing the resistance of the diffused resistor.

Abstract: A semiconductor device in which a dielectric breakdown of a gate oxide in a MOS capacitor can be prevented and in which a circuit area can be reduced. The semiconductor device comprises an NMOS transistor a gate of which is connected to a terminal VDD on a high potential side and a PMOS transistor a gate of which is connected to a terminal GND on a low potential side, source/drain (S/D) regions of the NMOS transistor and source/drain (S/D) regions of the PMOS transistor being electrically connected.

Abstract: A level conversion circuit that prevents the operation speed from decreasing when the power supply voltage decreases while appropriately performing level conversion. The level conversion circuit includes first and second PMOS transistors. A first NMOS transistor is connected to the first PMOS transistor and the second PMOS transistor. A second NMOS transistor is connected to the second PMOS transistor and the first PMOS transistor. A bias circuit, connected to the first and second NMOS transistors, generates a bias potential that is supplied to the first and second NMOS transistors and that is greater than the first voltage by a threshold voltage of the first and second NMOS transistors. The bias circuit further controls current, which determines the bias potential and flows to the bias circuit, in accordance with a control signal having the first voltage.

Abstract: A memory structure/circuit has at least two memory cell arrays connected to each other in a hierarchy. The bit lines of the two or more memory cell arrays are connected by hierarchy switches. The memory cells of one of the arrays can be read out faster than the others by using the hierarchy switches to select one array without selecting the other arrays. So the data that is read with higher frequency can be selectively read out faster if it is stored in the faster access memory array. If the data in the faster access memory cell array includes a copy of the data in the other array, it can be used as a cache memory. A tag array and data array in combination that are connected to another tag array and data array in combination through hierarchy switch connections can provide a cache memory that is direct mapped or set associative, and also full associative.

Abstract: A crystal oscillation circuit has a reduced circuit area and enables to stably oscillate at low consumed current. The crystal oscillation circuit includes an oscillating amplifier and a constant voltage generator. The oscillating amplifier excites a resonator composed of a resistor, a crystal oscillator and a capacitor. The constant voltage generator includes a one-stage differential circuit composed of a transistor and a capacitor for suppressing transient fluctuation of a constant voltage Vreg for generating the constant voltage Vreg served as a supply voltage for the oscillating amplifier. By generating the constant voltage Vreg through the one-stage differential circuit, the phase lag of the constant voltage Vreg reaches 90 degrees at most. This eliminates the necessity of a phase compensation capacitor, resulting in making the circuit area smaller and realizing the stable oscillation at low consumed current.

Abstract: An oscillation circuit capable of outputting an oscillation signal of constant frequency free from the influence of source voltage, temperature, and nonuniformity and fluctuation in inverter threshold voltage. An inverter inverts a voltage applied to one end of a capacitive element and outputs the inverted voltage to transistors and an inverter. A constant voltage source outputs a constant voltage free from the influence of source voltage and temperature. The transistors connect the other end of the capacitive element to the constant voltage source or ground in accordance with the voltage output from the first-mentioned inverter. A constant current source causes a constant current free from the influence of the source voltage and temperature to flow into or out of the one end of the capacitive element in accordance with the voltage from the second-mentioned inverter connected to the first-mentioned inverter.

Abstract: A semiconductor device is disclosed including a current generator circuit that generates a first current substantially proportional to an absolute temperature, the first current being determined by a size ratio of a MOS transistor, and by a resistor; and a starting-up circuit that causes the current generator circuit to generate the first current at a stable working point of the current generator circuit, wherein while the current generator circuit operates at the stable working point, a current that flows through the starting-up circuit is determined by a diffusion resistance and a MOS transistor. When the current generator circuit starts operating at a stable operating point, resistance of the diffusion resistor and a MOS transistor connected in series determines a current that flows through a starting-up circuit. According to the above arrangements, the power consumption of the circuit can be reduced by increasing the resistance of the diffused resistor.

Abstract: An AD converter includes a sample-&-hold circuit which samples and holds an input analog potential in a first period, and generates a signal indicative of a magnitude relation between the held input analog potential and a reference potential in a second period, a plurality of amplifiers connected in series which amplify an output of the sample-&-hold circuit, and a control circuit which controls operating timing of the amplifiers so as to make at least one of the amplifiers start operating in a middle of the first period.

Abstract: An AD converter includes a sample-&-hold circuit which samples and holds an input analog potential in a first period, and generates a signal indicative of a magnitude relation between the held input analog potential and a reference potential in a second period, a plurality of amplifiers connected in series which amplify an output of the sample-&-hold circuit, and a control circuit which controls operating timing of the amplifiers so as to make at least one of the amplifiers start operating in a middle of the first period.

Abstract: An analog switch circuit with superior breakdown voltage characteristics that can operate at a high speed at a low power supply voltage. The analog switch circuit includes a comparator circuit for inputting and comparing an analog input signal input to an analog switch section and a reference signal. If the input potential of the analog input signal is lower than the reference potential of the reference signal, a voltage boost circuit sets a potential of a gate of an n MOS transistor included in the analog switch section to a potential of positive power supply voltage. If the input potential of the analog input signal is higher than the reference potential of the reference signal, the voltage boost circuit boosts the potential of the gate to a potential higher than the potential of power supply voltage.

Abstract: An analog switch circuit with superior breakdown voltage characteristics that can operate at a high speed at a low power supply voltage. The analog switch circuit includes a comparator circuit for inputting and comparing an analog input signal input to an analog switch section and a reference signal. If the input potential of the analog input signal is lower than the reference potential of the reference signal, a voltage boost circuit sets a potential of a gate of an n MOS transistor included in the analog switch section to a potential of positive power supply voltage. If the input potential of the analog input signal is higher than the reference potential of the reference signal, the voltage boost circuit boosts the potential of the gate to a potential higher than the potential of power supply voltage.

Abstract: An A/D converter includes a capacitor type D/A conversion circuit including a capacitor array constituted of a plurality of capacitors for sampling an input potential and storing electric charge, a first resistor type D/A conversion circuit for generating a desired potential by potential division, a second resistor type D/A conversion circuit for generating a desired potential by potential division, a first signal path for adding an output of the first resistor type D/A conversion circuit to an output of the capacitor type D/A conversion circuit by capacity coupling; a second signal path for adding an output of the second resistor type D/A conversion circuit to an output of the capacitor type D/A conversion circuit by capacity coupling, and a comparing circuit for determining whether an output potential of the capacitor type D/A conversion circuit is higher or lower than an input potential, and thereby the circuit with processing time of A/D conversion being shortened can be provided.

Abstract: An A/D converter includes a capacitor type D/A conversion circuit including a capacitor array constituted of a plurality of capacitors for sampling an input potential and storing electric charge, a first resistor type D/A conversion circuit for generating a desired potential by potential division, a second resistor type D/A conversion circuit for generating a desired potential by potential division, a first signal path for adding an output of the first resistor type D/A conversion circuit to an output of the capacitor type D/A conversion circuit by capacity coupling; a second signal path for adding an output of the second resistor type D/A conversion circuit to an output of the capacitor type D/A conversion circuit by capacity coupling, and a comparing circuit for determining whether an output potential of the capacitor type D/A conversion circuit is higher or lower than an input potential, and thereby the circuit with processing time of A/D conversion being shortened can be provided.

Abstract: A memory structure/circuit has at least two memory cell arrays connected to each other in a hierarchy. The bit lines of the two or more memory cell arrays are connected by hierarchy switches. The memory cells of one of the arrays can be read out faster than the others by using the hierarchy switches to select one array without selecting the other arrays. So the data that is read with higher frequency can be selectively read out faster if it is stored in the faster access memory array. If the data in the faster access memory cell array includes a copy of the data in the other array, it can be used as a cache memory. A tag array and data array in combination that are connected to another tag array and data array in combination through hierarchy switch connections can provide a cache memory that is direct mapped or set associative, and also full associative.

Abstract: A memory structure/circuit has at least two memory cell arrays connected to each other in a hierarchy. The bit lines of the two or more memory cell arrays are connected by hierarchy switches. The memory cells of one of the arrays can be read out faster than the others by using the hierarchy switches to select one array without selecting the other arrays. So the data that is read with higher frequency can be selectively read out faster if it is stored in the faster access memory array. If the data in the faster access memory cell array includes a copy of the data in the other array, it can be used as a cache memory. A tag array and data array in combination that are connected to another tag array and data array in combination through hierarchy switch connections can provide a cache memory that is direct mapped or set associative, and also full associative.

Abstract: The present invention provides a circuit, in which a device typified by a PLED element is built into a flip-flop. In this case, a storage node of the device is low leakage. According to the present invention, it is possible to realize a SRAM that has nonvolatility while achieving high-speed operation. It is also possible to realize a flip-flop having the same characteristics. An example of a typical mode of the present invention is a storage circuit characterized by the following: a storage element is a device incorporating: a first path for a carrier; a first mode for storing a charge that generates an electric field where conductivity of the first path is changed; and a barrier structure through which a second carrier moves in response to given voltage so that the second carrier is stored in the first node; and the storage circuit includes a second node, to which information stored in the first node is outputted steadily in a state in which power is supplied.

Abstract: A memory structure/circuit has at least two memory cell arrays connected to each other in a hierarchy. The bit lines of the two or more memory cell arrays are connected by hierarchy switches. The memory cells of one of the arrays can be read out faster than the others by using the hierarchy switches to select one array without selecting the other arrays. So the data that is read with higher frequency can be selectively read out faster if it is stored in the faster access memory array. If the data in the faster access memory cell array includes a copy of the data in the other array, it can be used as a cache memory. A tag array and data array in combination that are connected to another tag array and data array in combination through hierarchy switch connections can provide a cache memory that is direct mapped or set associative, and also full associative.

Abstract: A memory structure/circuit has at least two memory cell arrays connected to each other in a hierarchy. The bit lines of the two or more memory cell arrays are connected by hierarchy switches. The memory cells of one of the arrays can be read out faster than the others by using the hierarchy switches to select one array without selecting the other arrays. So the data that is read with higher frequency can be selectively read out faster if it is stored in the faster access memory array. If the data in the faster access memory cell array includes a copy of the data in the other array, it can be used as a cache memory. A tag array and data array in combination that are connected to another tag array and data array in combination through hierarchy switch connections can provide a cache memory that is direct mapped or set associative, and also full associative.