Abstract: A display device includes: a base layer; and light emitting elements disposed on the base layer, the light emitting elements including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type and P-type semiconductor layers. The light emitting elements include a first light emitting element emitting light of a first color and a second light emitting element emitting light of a second color. The N-type semiconductor layer includes a first N-type semiconductor layer of the first light emitting element and a second N-type semiconductor layer of the second light emitting element. The active layer includes a first active layer of the first light emitting element and a second active layer of the second light emitting element. The first and second N-type semiconductor layers are integral with each other, and form a plane surface in an area where the active layer is disposed.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: A film deposition apparatus includes a chamber, at least one susceptor disposed inside the chamber and including a seating part, and at least three protrusion parts disposed on the seating part. The seating part is configured to have a wafer seated thereon. The film deposition apparatus further includes a heat source configured to supply heat to the at least one susceptor. The at least three protrusion parts are spaced a distance apart from a center of the at least one susceptor, and the distance is greater than or equal to one third (?) of a radius of the wafer seated on the at least one susceptor or greater than or equal to one third (?) of a radius of the at least one susceptor.

Abstract: A plasma dry etching apparatus includes a pedestal in a process chamber, the pedestal being configured to support a wafer, a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power, an edge ring on an edge of the pedestal, a coupling ring having a first side on the pedestal and a second side on the edge ring, an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring to drop a temperature of an extreme edge of the wafer, and an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring to raise the temperature of an extreme edge of the wafer.

Abstract: An example embodiment relates to a plasma diagnostic apparatus that exists outside of a plasma generation chamber. The plasma diagnostic apparatus is configured to recognize and/or diagnose a state of plasma using a signal flowing from a floated electrode of a plasma generation apparatus to determine a diagnostic factor of the plasma.

Abstract: A plasma dry etching apparatus includes a pedestal in a process chamber, the pedestal being configured to support a wafer, a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power, an edge ring on an edge of the pedestal, a coupling ring having a first side on the pedestal and a second side on the edge ring, an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring to drop a temperature of an extreme edge of the wafer, and an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring to raise the temperature of an extreme edge of the wafer.

Abstract: A plasma generating device is disclosed, which generates plasma by supplying a bias RF power in the initial state in an inductive coupled plasma (ICP) system. Especially, an insulator which insulates a ground member from a susceptor supplied with the bias RF power is separated into at least two pieces such that the thermal expansion of the insulator can be generated similarly to adjoining parts.

Abstract: This invention relates to a liquid silicone rubber (LSR) composition useful for forming a breathable coating film on a textile, in particular, woven, non-woven or knitted fabric and synthetic leather, and a process for producing a breathable coating film on a textile. This coating film is characterized by showing moisture permeation and water proofness.