Abstract: The disclosure provides a structure and method for a memory element to confine a metal (e.g., a remaining portion of a metallic residue) with a spacer. A structure according to the disclosure includes a memory element over a first portion of an insulator layer. A portion of the memory element includes a sidewall over the insulator layer. A spacer is adjacent the sidewall of the memory element and on the first portion of the insulator layer. A metal-dielectric layer is within an interface between the spacer and the sidewall or an interface between the spacer and the first portion of the insulator layer. The insulator layer includes a second portion adjacent the first portion, and the second portion does not include the memory element, the spacer, and the metal-dielectric layer thereon.

Abstract: A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectric layer. A spacer may be provided over the barrier layer.

Abstract: A semiconductor device may be provided, including a first dielectric layer having a first region and a second region laterally adjacent to the first region. The semiconductor device may further include a bottom electrode at least partially arranged within the first region of the first dielectric layer, a memory element arranged over the bottom electrode, a top electrode arranged over the memory element, and a second dielectric layer arranged over at least the first region of the first dielectric layer. The second dielectric layer may surround the memory element and may surround at least a part of the top electrode. The semiconductor device may further include a third dielectric layer arranged over the second region of the first dielectric layer and laterally adjacent to the second dielectric layer, and a conductive interconnect arranged in the third dielectric layer and the second region of the first dielectric layer.

Abstract: A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectric layer. A spacer may be provided over the barrier layer.

Abstract: A semiconductor device may be provided, including a first dielectric layer having a first region and a second region laterally adjacent to the first region. The semiconductor device may further include a bottom electrode at least partially arranged within the first region of the first dielectric layer, a memory element arranged over the bottom electrode, a top electrode arranged over the memory element, and a second dielectric layer arranged over at least the first region of the first dielectric layer. The second dielectric layer may surround the memory element and may surround at least a part of the top electrode. The semiconductor device may further include a third dielectric layer arranged over the second region of the first dielectric layer and laterally adjacent to the second dielectric layer, and a conductive interconnect arranged in the third dielectric layer and the second region of the first dielectric layer.

Abstract: A wiring structure includes a substrate, a lower insulation layer on the substrate, a lower wiring in the lower insulation layer, a first etch-stop layer covering the lower wiring and including a metallic dielectric material, a second etch-stop layer on the first etch-stop layer and the lower insulation layer, an insulating interlayer on the second etch-stop layer, and a conductive pattern extending through the insulating interlayer, the second etch-stop layer and the first etch-stop layer and electrically connected to the lower wiring.

Abstract: A wiring structure includes a substrate, a lower insulation layer on the substrate, a lower wiring in the lower insulation layer, a first etch-stop layer covering the lower wiring and including a metallic dielectric material, a second etch-stop layer on the first etch-stop layer and the lower insulation layer, an insulating interlayer on the second etch-stop layer, and a conductive pattern extending through the insulating interlayer, the second etch-stop layer and the first etch-stop layer and electrically connected to the lower wiring.