Abstract: A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced.

Abstract: Provided are a method for manufacturing a flexible device, a flexible device, a flexible piezoelectric device and a flexible capacitor manufactured by the same, and a method for manufacturing a flexible sensor. A method for manufacturing a flexible device includes: laminating a first metal layer on a silicon oxide layer on a silicon substrate; laminating a device on the first metal layer; annealing the first metal layer to oxidize the first metal into a first metal oxide; etching the first metal oxide so as to separate the device from the silicon oxide layer; and transferring the separated device to a flexible substrate using a transfer layer. According to the disclosed method for manufacturing a flexible device, differently from the prior art where the silicon substrate itself is etched, the metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments.

Abstract: Disclosed is an SrTiO3-based grain boundary barrier layer capacitor which is superb in dielectric constant and temperature characteristics. It is prepared by infiltrating a liquid-phase oxide mixture into a donor-doped SrTiO3matrix to form second-phase dielectric layers at the grain boundaries of the matrix. The liquid-phase oxide mixture comprises CaO and BaO in a particular molar ratio. The SrTiO3-based grain boundary barrier capacitor exhibits a high dielectric constant and a low dieletric loss with stable temperature characteristics.

Abstract: A sialon composite and fabrication method thereof in which the phase of a surface layer thereof is modified differently from that of the bulk. The surface layer is modified to .alpha.-sialon or .alpha.-.beta. sialon composite but the bulk is .beta.-sialon. Also, the surface layer is modified to .beta.-sialon or .alpha.-.beta. sialon composite but the bulk is .alpha.-sialon.

Abstract: There is a method for making a strontium titanate based Grain-Boundary Barrier Layer Capacitors (GBBLC) with improved dielectric properties by introducing an intermediate step of heat-treatment in an oxidizing atmosphere between sintering of a strontium titanate based powder in a reducing atmosphere and an infiltration of the obtained sintered body with a metal oxide.

Abstract: The present invention provides a process for the preparation of YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor which comprises surrounding a sintered material in which the molar ratio of Y:Ba:Cu is 2:1:1 with liquid-forming powder and subjecting the powder compact to isothermal heat-treatment at a temperature below the peritectic temperature of YBa.sub.2 Cu.sub.3 O.sub.7-x. The YBa.sub.2 Cu.sub.3 O.sub.7-x superconductors prepared according to the present invention have aligned grain structure in one direction and thus exhibit a high critical current density.

Abstract: MoO.sub.2 is used as an accelerant for transformation of zirconia (ZrO.sub.2) from a tetragonal to a monoclinic crystal phase. A ZrO.sub.2 -MoO.sub.2 alloy having an increased content of monoclinic ZrO.sub.2 is prepared by mixing MoO.sub.2 with ZrO.sub.2 followed by heat treatment. In another aspect of the invention, the surface of an alumina-zirconia composite is strengthened by heating the composite in the presence of MoO.sub.2 -ZrO.sub.2 mixed powder.

Abstract: A tungsten based heavy alloy having a W--Ni--Fe based composition containing traces of lanthanum or calcium, thereby capable of exhibiting high toughness, irrespective of the content of impurities such as phosphorous and sulfur contained therein, the cooling rate after the sintering treatment and the re-heating treatment. The present invention provides a method for making the high toughness tungsten based heavy alloy. The tungsten based heavy alloy of the present invention is useful to manufacture warheads for breaking armor plates, which require high toughness.