Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

Abstract: A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.

Abstract: Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

Abstract: A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract: A cover panel and a display device, the cover panel including a heat sink layer; an impact absorbing layer on the heat sink layer; and an elastic pattern on at least one side of the impact absorbing layer.

Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract: Disclosed is a sensor for measuring skin conductivity and a method of manufacturing the same, wherein the sensor includes: a base board made of a flexible material; an electrode provided on a surface of the base board, and transmitting an electrical signal; and an uneven structure provided on the electrode, and configured to increase an electrical contact area with skin via sweat secreted onto a surface of skin.

Abstract: An electrowetting display device and manufacturing method thereof. The manufacturing method comprises forming pixel electrodes on a substrate, forming an insulation layer on the pixel electrodes, applying light through a mask to expose portions of the insulation layer, developing the insulation layer to at least partially remove the exposed portions of the insulation layer, wherein the developing forms a water repellent layer on the pixel electrodes and partitioning walls on the water repellent layer, and forming an oil layer between the partitioning walls and on the water repellent layer. The water repellent layer and the sides of the partitioning walls are hydrophobic. Upper surfaces of the partitioning walls are hydrophilic. The partition walls are thicker than the water repellent layer.

Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

Abstract: A cover panel and a display device, the cover panel including a heat sink layer; an impact absorbing layer on the heat sink layer; and an elastic pattern on at least one side of the impact absorbing layer.

Abstract: An atomic layer deposition apparatus includes: a substrate support supporting a substrate; a first divider including a plurality of first division modules provided on the substrate support and selectively spraying a source gas, a reaction gas, and a purge gas to each of predetermined areas; and a second divider including a plurality of second division modules provided on the first divider and supplying the gases to the respective first division modules, wherein each of the plurality of second division modules is formed of a first through-hole and a second through-hole, and the gas passed through the first and second through-holes moves to the first division modules.

Abstract: A display device includes a substrate, a thin film transistor disposed on the substrate, where the thin film transistor includes a drain electrode, a passivation layer disposed on the substrate covering the thin film transistor, a common electrode disposed on the passivation layer, where the common electrode receives a common voltage, a liquid crystal layer disposed in a microcavity layer on the common electrode, a roof layer disposed covering the liquid crystal layer, and a pixel electrode disposed on the roof layer, and a method of manufacturing the display device is provided.

Abstract: An atomic layer deposition apparatus includes a first base plate on which a seat portion is defined to allow a substrate to be seated thereon, a second base plate disposed opposite to the first base plate, a first gas nozzle portion arranged on the second base plate, a second gas nozzle portion arranged on the second base plate to be spaced apart from the first gas nozzle portion and substantially parallel to the first gas nozzle portion, and a gas storage portion connected to the first gas nozzle portion and the second gas nozzle portion.

Abstract: A retinal prosthesis system can comprise: a flexible substrate; a nanowire light detector which is placed on the substrate, and comprises one or more nanowires of which the resistance changes according to the applied light; one or more micro-electrodes which are placed on the substrate, are electrically connected to the nanowire light detector, and come in contact with retinal cells; and an electric power supply source for applying electric power to the nanowire light detector and the micro-electrodes. The retinal prosthesis system can be implemented into a very thin and flexible substrate type high resolution retinal system by manufacturing a nanowire light detector on a substrate in which micro-electrodes are implemented.

Abstract: In a display substrate, a method for manufacturing the display substrate and an electro-wetting display apparatus including the display substrate, the display substrate includes a base substrate, a sidewall defining a unit pixel area, a pixel electrode, a hydrophobic insulating layer and a light blocking layer. The sidewall is on the base substrate and defines the unit pixel area. The pixel electrode is in the unit pixel area. The hydrophobic insulating layer is on the sidewall and the pixel electrode. The light blocking layer is on the hydrophobic insulating layer and overlaps the sidewall.