Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract: A fluorocarbon coating comprises an amorphous structure with CF2 bonds present in an atomic percentage of at least about 15%, and having a refractive index of less than about 1.4. The fluorocarbon coating can be deposited on a substrate by placing the substrate in a process zone comprising a pair of process electrodes, introducing a deposition gas comprising a fluorocarbon gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes.

Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.

Abstract: Embodiments of the present invention provide methods for reducing defects during multi-layer deposition. In one embodiment, the method includes exposing the substrate to a first gas mixture and an inert gas in the presence of a plasma to deposit a first material layer on the substrate, terminating the first gas mixture when a desired thickness of the first material is achieved while still maintaining the plasma and flowing the inert gas, and exposing the substrate to the inert gas and a second gas mixture that are compatible with the first gas mixture in the presence of the plasma to deposit a second material layer over the first material layer in the same processing chamber, wherein the first material layer and the second material layer are different from each other.

Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.

Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.

Abstract: Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

Abstract: The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH2F2/Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material (1004) deposited on a layer of silicon oxide (1002) were etched according to the novel technique, forming relatively narrow trenches (1010, 1012, 1014, 1016, 1030, 1032, 1034 and 1036) and wider trenches (1020, 1022, 1040 and 1042). The technique is also suitable for forming dual damascene structures (1152, 1154 and 1156). In additional embodiments, manufacturing systems (1410) are provided for fabricating IC structures of the present invention. These systems include a controller (1400) that is adapted for interacting with a plurality of fabricating stations (1420, 1422, 1424, 1426 and 1428).

Abstract: The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH2F2/Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material (1004) deposited on a layer of silicon oxide (1002) were etched according to the novel technique, forming relatively narrow trenches (1010, 1012, 1014, 1016, 1030, 1032, 1034 and 1036) and wider trenches (1020, 1022, 1040 and 1042). The technique is also suitable for forming dual damascene structures (1152, 1154 and 1156). In additional embodiments, manufacturing systems (1410) are provided for fabricating IC structures of the present invention. These systems include a controller (1400) that is adapted for interacting with a plurality of fabricating stations (1420, 1422, 1424, 1426 and 1428).

Abstract: An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue.

Abstract: An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue.