Patents by Inventor Sumeet Prakash Kulkarni

Sumeet Prakash Kulkarni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10904977
    Abstract: A light emitting diode system allows for high current end user LED matrix applications while mitigating internal damage to control circuitry that may be caused by excess current flow. In one example, multiple switches operate in parallel across an LED. When an overvoltage condition is detected in a first switch, a logic circuit determines those switches programmed to operate in parallel and causes them to conduct current. This reduces the amount of current flowing through any one switch and mitigates harm to the device. The parallel configuration of switches may be driven by a single pulse width modulated current. This allows the drive current to be divided between parallel transistors, limiting the damaging effects that can be caused by high currents flowing through the transistors.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: January 26, 2021
    Assignee: Texas Instruments Incorporated
    Inventors: Michael James Drake, Daniel Ross Herrington, Sumeet Prakash Kulkarni, Vahid Yousefzadeh, James Michael Patterson, James Harbison Masson
  • Publication number: 20190306938
    Abstract: A light emitting diode system allows for high current end user LED matrix applications while mitigating internal damage to control circuitry that may be caused by excess current flow. In one example, multiple switches operate in parallel across an LED. When an overvoltage condition is detected in a first switch, a logic circuit determines those switches programed to operate in parallel and causes them to conduct current. This reduces the amount of current flowing through any one switch and mitigates harm to the device. The parallel configuration of switches may be driven by a single pulse width modulated current. This allows the drive current to be divided between parallel transistors, limiting the damaging effects that can be caused by high currents flowing through the transistors.
    Type: Application
    Filed: April 10, 2019
    Publication date: October 3, 2019
    Inventors: Michael James Drake, Daniel Ross Herrington, Sumeet Prakash Kulkarni, Vahid Yousefzadeh, James Michael Patterson, James Harbison Masson
  • Patent number: 10306731
    Abstract: A light emitting diode system allows for high current end user LED matrix applications while mitigating internal damage to control circuitry that may be caused by excess current flow. In one example, multiple switches operate in parallel across an LED. When an overvoltage condition is detected in a first switch, a logic circuit determines those switches programmed to operate in parallel and causes them to conduct current. This reduces the amount of current flowing through any one switch and mitigates harm to the device. The parallel configuration of switches may be driven by a single pulse width modulated current. This allows the drive current to be divided between parallel transistors, limiting the damaging effects that can be caused by high currents flowing through the transistors.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: May 28, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Michael James Drake, Daniel Ross Herrington, Sumeet Prakash Kulkarni, Vahid Yousefzadeh, James Michael Patterson, James Harbison Masson
  • Publication number: 20170325300
    Abstract: A light emitting diode system allows for high current end user LED matrix applications while mitigating internal damage to control circuitry that may be caused by excess current flow. In one example, multiple switches operate in parallel across an LED. When an overvoltage condition is detected in a first switch, a logic circuit determines those switches programmed to operate in parallel and causes them to conduct current. This reduces the amount of current flowing through any one switch and mitigates harm to the device. The parallel configuration of switches may be driven by a single pulse width modulated current. This allows the drive current to be divided between parallel transistors, limiting the damaging effects that can be caused by high currents flowing through the transistors.
    Type: Application
    Filed: May 5, 2017
    Publication date: November 9, 2017
    Inventors: Michael James Drake, Daniel Ross Herrington, Sumeet Prakash Kulkarni, Vahid Yousefzadeh, James Michael Patterson, James Harbison Masson
  • Patent number: 9137862
    Abstract: A gate driver circuit providing a slew-rate controlled gate control signal while minimizing the stretching of the gate control signal relative to the input control pulse. Control logic effects two threshold voltage levels. When the gate control signal is between the two threshold voltage levels, the slew rate of the gate control signal is controlled such that the gate of the transistor being driven is driven softly. When the gate control signal is less than the first threshold voltage level or greater than the second threshold voltage level, the gate of the transistor being driven is driven hard. In one embodiment, the first and second threshold voltage levels are set such that the on/off threshold of the transistor being driven is between the two threshold voltage levels.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: September 15, 2015
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Sumeet Prakash Kulkarni, Yan Yin
  • Publication number: 20140361706
    Abstract: A gate driver circuit providing a slew-rate controlled gate control signal while minimizing the stretching of the gate control signal relative to the input control pulse. Control logic effects two threshold voltage levels. When the gate control signal is between the two threshold voltage levels, the slew rate of the gate control signal is controlled such that the gate of the transistor being driven is driven softly. When the gate control signal is less than the first threshold voltage level or greater than the second threshold voltage level, the gate of the transistor being driven is driven hard. In one embodiment, the first and second threshold voltage levels are set such that the on/off threshold of the transistor being driven is between the two threshold voltage levels.
    Type: Application
    Filed: November 27, 2013
    Publication date: December 11, 2014
    Applicant: Texas Instruments Incorporated
    Inventors: Sumeet Prakash Kulkarni, Yan Yin