Abstract: An electronic circuit includes a primary wide bandgap bipolar power switching device configured to supply a load current in response to a control signal applied to a control terminal thereof, and a driver device configured to generate the control signal. At least one of the primary switching device or the driver device may include an optically triggered switching device. A discrete wide bandgap semiconductor device includes a primary bipolar device stage configured to switch between a conducting state and a nonconducting state upon application of a control current, and a bipolar driver stage configured to generate the control current and to supply the control current to the primary bipolar device stage. At least one of the primary bipolar device stage and the bipolar driver stage may include an optically triggered wide bandgap switching device.

Abstract: A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.

Abstract: Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.

Abstract: Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.

Abstract: A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.

Abstract: An electronic circuit includes a primary wide bandgap bipolar power switching device configured to supply a load current in response to a control signal applied to a control terminal thereof, and a driver device configured to generate the control signal. At least one of the primary switching device or the driver device may include an optically triggered switching device. A discrete wide bandgap semiconductor device includes a primary bipolar device stage configured to switch between a conducting state and a nonconducting state upon application of a control current, and a bipolar driver stage configured to generate the control current and to supply the control current to the primary bipolar device stage. At least one of the primary bipolar device stage and the bipolar driver stage may include an optically triggered wide bandgap switching device.