Patents by Inventor Sun Bin Yum

Sun Bin Yum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods
    Patent number: 11913133
    Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: February 27, 2024
    Assignee: Lintech Corporation
    Inventors: Ho Jung You, Dong Nam Shin, Sei Kwang Oh, Jun Seok Lee, Sun Bin Yum, Tae-Woo Kang
  • METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON INGOT USING A CRUCIBLE IN WHICH AN OXYGEN EXHAUST PASSAGE IS FORMED BY SINGLE CRYSTAL OR POLYCRYSTALLINE RODS
    Publication number: 20230059953
    Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.
    Type: Application
    Filed: July 6, 2022
    Publication date: February 23, 2023
    Inventors: Ho Jung YOU, Dong Nam Shin, Sei Kwang Oh, Jun Seok Lee, Sun Bin Yum, Tae-Woo Kang